Hitachi, Ltd.

Honda Motor Co., Ltd.

Satoshi Moriya

Nobuaki Miyakawa

Toshio Saito

Goichi Yokoyama

Tatsuyuki Saito

Tsuyoshi Fujiwara

Hidenori Sato

Morio Nakamura

A structure obtaining a desired integrated circuit by sticking together a plurality of semiconductor substrates and electrically connecting integrated circuits formed on semiconductor chips of the respective semiconductor substrates is provided, and a penetrating electrode penetrating between a main surface and a rear surface of each of the semiconductor substrates and a penetrating separation portion separating the penetrating electrode are separately arranged. Thereby, after forming an insulation trench portion for formation of the penetrating separation portion on the semiconductor substrate, a MIS&#x2022;FET is formed, and then, a conductive trench portion for formation of the penetrating electrode can be formed. Therefore, element characteristics of a semiconductor device having a three-dimensional structure can be improved.

Manufacturing method of semiconductor device and semiconductor device

In order to improve the manufacturing yield of a semiconductor device having a three-dimensional structure in which a plurality of chips are stacked and attached to each other, the opening shape of each of conductive grooves (A) formed in each chip (C) obtained from a wafer (W) is rectangular, and the number of the conductive grooves (A) whose long-sides are directed in a Y direction and the number of the conductive grooves (A) whose long-sides are directed in an X direction perpendicular to the Y direction are made to be approximately equal to each other number in the entire wafer (W), whereby the film stress upon embedding of a conductive film into the interior of the conductive grooves is reduced, and generation of exfoliation and micro-cracks in the conductive film or warpage and cracks of the wafer (W) are prevented.

Semiconductor device

Growing community of inventors

Akishima, Japan

Satoshi Moriya