Sharp Kabushiki Kaisha Corporation

Panasonic Intellectual Property Management Co., Ltd.

Satoshi Morishita

Hiroshi Iwata

Seizo Kakimoto

Masayuki Nakano

Koichiro Fujita

Kouichiro Adachi

Kazuo Sugimoto

Tadashi Yasui

Akihide Shibata

Hiroyuki Handa

Akira Takahashi

Yuta Moriura

Yohei Morishita

Toru Okino

Yoshitaka Nakamura

Toru Sakuragawa

Kenji Komiya

Yasufumi Kawai

Toshimasa Matsuoka

Takao Kinoshita

Takamitsu Suzuki

Tomotoshi Satoh

Tetsu Negishi

Hiroyuki Hagino

Takashi Fukushima

Kouichirou Adachi

Takahiko Andoh

Daisuke Kurita

A travel sickness estimation system includes an estimation unit and an output unit. The estimation unit is configured to perform estimation processing of estimating, based on person information indicating conditions of a person who is on board a moving vehicle, whether or not the person is in circumstances that would cause travel sickness for him or her. The output unit is configured to output a result of the estimation processing performed by the estimation unit.

Travel sickness estimation system, moving vehicle, travel sickness estimation method, and travel sickness estimation program

A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.

Semiconductor wafer, semiconductor device diced from semiconductor wafer, and method for manufacturing semiconductor device

This FET includes: a source electrode pad, which is formed on a source electrode and which is electrically connected to the source electrode; and/or a drain electrode pad, which is formed on the drain electrode and which is electrically connected to the drain electrode. The source electrode pad has a cutout for reducing a parasitic capacitance between the source electrode pad and the drain electrode, and the drain electrode pad has a cutout for reducing a parasitic capacitance between the drain electrode pad and the source electrode.

Field-effect transistor

A nitride semiconductor device includes a substrate, a nitride semiconductor laminate, and an ohmic electrode of TiAl-based material. The nitride semiconductor laminate has a first nitride semiconductor layer on the substrate, and a second nitride semiconductor layer forming a heterointerface with the first nitride semiconductor layer. The nitride semiconductor device has an oxygen concentration profile in a depth direction of the device across between the ohmic electrode and the nitride semiconductor laminate. The profile has a first oxygen concentration peak near an interface between the ohmic electrode and the nitride semiconductor laminate in a region, of the nitride semiconductor laminate, that is on a substrate side of the interface, and a second oxygen concentration peak having an oxygen concentration of 3&#xd7;10cm-1.2&#xd7;10cmin a position deeper than that of the first oxygen concentration peak.

Nitride semiconductor device

A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses () are formed in a nitride semiconductor multilayer body () composed of an undoped GaN layer () and an undoped AlGaN layer () formed on an Si substrate (), and a source electrode () and a drain electrode () are formed in the recesses (). In a region deeper than an interface (S, S) between the GaN layer () and the source electrode () and drain electrode (), which are formed from a TiAl material, a first chlorine concentration peak (P) is formed in vicinity of the interface, and a second chlorine concentration peak (P) having a chlorine concentration of 1.3&#xd7;10cmor lower is formed at a position deeper than the first chlorine concentration peak (P).

To facilitate electrode connections and achieve a high light emitting efficiency, a rod-like light-emitting device includes a semiconductor core of a first conductivity type having a rod shape, and a semiconductor layer of a second conductivity type formed to cover the semiconductor core. The outer peripheral surface of part of the semiconductor core is exposed.

Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device

A fuel cell has unit cells wherein gas discharged from an oxidizer electrode in one unit cell and gas discharged from a fuel electrode in other adjacent unit cell are merged in and charged through a discharge flow passage provided outside these unit cells. The discharge flow passage is shared by the oxidizer electrode in the one unit cell and the fuel electrode in the other unit cell. A flow of the gas discharged from the oxidizer electrode is utilized to efficiently exhaust the gas discharged from the fuel electrode.

Fuel cell having unit cells arranged to merge gases generated in the unit cells

A fuel cell has a structure that an area of an opening at which a first flow passage opens toward a diffusion layer side of a fuel electrode is smaller than an area of an opening at which a second flow passage opens toward the diffusion layer side. This structure serves as a supply suppression structure for suppressing supply of liquid fuel from the first flow passage to the diffusion layer of the fuel electrode, and a discharge acceleration structure for accelerating discharge of discharge gas from the second flow passage. As compared with the case where the opening area of the first flow passage and the opening area of the second flow passage are equal to each other, the supply of liquid fuel from the first flow passage to the diffusion layer is suppressed so that liquid fuel is more easily filled in the first flow passage.

Fuel cell

A semiconductor device having a gate electrode on a Si-substrate through a gate oxide film; a first impurity diffusion region having a conductivity type reversed to a well which will form a part of source and drain regions in the two opposing sides of the gate electrode through gate electrode sidewall dielectric films; a second impurity diffusion region having the same conductivity type as the first impurity diffusion region beneath the gate electrode sidewall dielectric film, touching a channel region directly below the gate electrode and being shallower than the first impurity diffusion region; a titanium silicide film on the gate electrode and the surface of the Si-substrate of the first impurity diffusion region in the two opposing sides of the gate electrode sidewall dielectric film; and a third impurity diffusion region, formed in the first impurity diffusion region, having a higher concentration than the first impurity diffusion region and the same conductivity type as the first and second impurity diffusion region. The above semiconductor device is able to suppress the short-channel effects, and reduce the source-drain parasitic resistance and the source-drain junction leakage current while maintaining a small source-drain capacity.

Semiconductor device and process and apparatus of fabricating the same

A method for diagnosing a function of plasma etching apparatuses and a method for estimating selectivity in an actual etching process in fabrication of semiconductor devices involves generating plasma of a gas mixture including halogen and oxygen in a predetermined condition. An intensity of one of first emissions from the plasma at a first wavelength and an intensity of one of second emissions from the plasma at a second wavelength is measured A ratio of the intensity of the one of first emissions to that of the one of second emissions is obtained. The obtained emission intensity ratio is compared with an emission intensity ratio which is previously measured for a plasma condition when the plasma etching apparatus operates normally.

Dry etching method

In accordance with the development of the fineness of MOSFETs, a gate insulating film and a capacitor insulating film are required to have a smaller thickness and a higher film quality. Accordingly, the present invention is intended to provide a method for forming a high-quality insulating film while preventing hydrogen atoms which cause a leak current and an electron trap from entering the insulating film. The present method uses a gas of molecules containing at least nitrogen, the gas is a compound which includes no oxygen atom and has no bond of a nitrogen atom and a hydrogen atom (N--H) and generates monoatomic nitrogen when the gas dissociates.

Method of forming insulating film with few hydrogen atom inclusions

Silicon material layers formed on an oxide underlayer are attached using a plasma including a gas mixture of a halogen and oxygen. Intensities of first emissions from the plasma at a first wavelength and second emissions from the plasma at a second wavelength are measured. A ratio of the first emissions intensity to the second emissions intensity is determined. The selectivity of silicon layers to oxide underlayers is measured for various conditions of the plasma under which the emissions intensity ratio is obtained. A correlation between the emissions intensity ratio and the selectivity is then established for various etching parameters. A plasma condition to obtain a desired selectivity may then be appropriately set using the established correlation.

Growing community of inventors

Osaka, Japan

Satoshi Morishita