Fujimi Incorporated

Satoshi Momota

Kohsuke Tsuchiya

Maki Asada

The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step P. In this polishing method, the final polishing step Phas a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step Pof polishing using a polishing composition S, a polishing sub-step provided before the polishing sub-step Pin the plurality of polishing sub-steps is a polishing sub-step Pof polishing using a polishing composition S, and the polishing composition Ssatisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition Sobtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition Sobtained in the standard test 1, and condition (B): the polishing composition Scontains an abrasive A, a basic compound B, and hydroxyethyl cellulose.

Method of polishing object to be polished containing material having silicon-silicon bond

To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90&#x2212;D50)/(D50&#x2212;D10) and the polishing composition is used for final polishing in silicon wafer polishing.

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Aichi, Japan

Satoshi Momota