Mitsubishi Electric Corporation

Satoshi Miho

Kenichi Horiguchi

Kenji Mukai

Kazuya Yamamoto

Koji Yamanaka

Yoshinobu Sasaki

Hiroshi Otsuka

Morishige Hieda

Yoichi Nogami

Tomoyuki Asada

Yutaro Yamaguchi

Shigeo Yamabe

Tatsuo Kohama

Naoko Nitta

Masakazu Hirobe

Reduction in impedance in a lead connected to a semiconductor element is achieved while achieving anchor effect. The semiconductor device includes a heatsink, a semiconductor element, a lead disposed on an upper side of the heatsink, and a molding material formed to cover the lead, the heatsink, and the semiconductor element. Formed on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view is a first convex portion protruding more than an edge portion of an upper surface in the position, and formed on an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view is a second convex portion protruding more than an edge portion of a lower surface in the position.

Semiconductor device, high-frequency power amplifier, and method of manufacturing semiconductor device

A comparatorthat detects the difference between a high frequency signal detected by a detectorand a feedback signal A output from a comparator; a comparatorthat detects the difference between the difference detected by the comparatorand a feedback signal B output from an adder; and a loop filterthat passes only a prescribed low frequency band of the output signal of the comparatorare provided, in which an amplitude sensitivity adjusteradjusts the amplitude sensitivity of a variable gain amplifierin accordance with the rate of change of the signal passing through the loop filter, thereby controlling the gain of the variable gain amplifier

Analog feedback amplifier

A semiconductor device includes a power amplifier for amplifying RF signals in multiple frequency bands, an output matching circuit connected to an output of the power amplifier, a first capacitor connected at a first end to an output of the output matching circuit, multiple output paths, a switch connected to a second end of the first capacitor and directing each of the RF signals to a respective one of the output paths in accordance with frequency band of the each of the RF signals, and multiple second capacitors. Each second capacitor is connected in series to a respective one of the output paths. The switch and either the first capacitor or the second capacitors, or both the first and second capacitors, are integrated as a single monolithic microwave integrated circuit.

Semiconductor device

Growing community of inventors

Tokyo, Japan

Satoshi Miho