Hitachi, Ltd.

Satoshi Matsuyoshi

Shinji Hiramitsu

Osamu Ikeda

Koji Sasaki

Masato Nakamura

Shosaku Ishihara

Ryouichi Kajiwara

Hiroyuki Ohta

Hidekatsu Onose

Susumu Murakami

Yasuhiro Mochizuki

Tadaaki Kariya

Yuji Takayanagi

Yukimasa Satou

Misuk Yamazaki

Chikara Makajima

A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a CuSncontent greater than a eutectic content.

Semiconductor device and automotive ac generator

A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.

Semiconductor device

Semiconductor device and automotive AC generator

The present invention provides a semiconductor device comprising a semiconductor element and a copper member which are bonded to each other by a bismuth-based (Bi-based) bonding material having its melting temperature of not less than 250&#xb0; C., wherein silver (Ag) is diffused in a region of the bonding material in the vicinity of an interface thereof to the semiconductor element with an inclination of concentration of the silver from the interface, in order to realize a manufacture of the semiconductor device without using lead (Pb) at low cost.

A semiconductor device is provided, in which buffer layers having a coefficient of linear expansion of 3&#xd7;10&#x2212;6/&#xb0; C. to 8&#xd7;10&#x2212;6/&#xb0; C. are joined to upper and lower surfaces of a silicon chip through a Pb-free solder having a thickness of not more than 0.05 mm and a melting point of not less than 250&#xb0; C. The upper surface of the upper buffer layer and the lower surface of the lower buffer layer are respectively joined to a lead and a base through Pb-free solders having a thickness of not less than 0.15 mm and a melting point of not less than 250&#xb0; C.

There is a need to provide a semiconductor device in which strain in a bonding member resulting from the difference in thermal deformation between a lead electrode and a semiconductor chip, which are electrically bonded to each other by the bonding member, is reduced for an improved thermal fatigue lifetime and the semiconductor chip has an improved current carrying capacity and enhanced heat dissipation. In the semiconductor device having the semiconductor chip mounted on the upper surface of the case electrode by using the bonding member and a lead electrode mounted on the upper surface of the semiconductor chip by using a bonding member, while an insulating member is filled in the space of the case electrode to seal a bonded portion, a trench is provided in the upper surface of the lead electrode to reduce large thermal strain occurring at the end portion of the bonding member due to the difference in linear expansion coefficients between the lead electrode and the semiconductor chip and improve the thermal fatigue lifetime. Consideration is also given to a reduction in variations in the thickness of a connecting member.

A gate turn-off thyristor having a p-emitter layer in the anode side, an n-base layer, a p-base layer and an n-emitter layer in the cathode side. The n-base layer is composed of a first layer portion adjacent to the p-emitter layer, a second layer portion adjacent to the p-base layer and having a lower impurity concentration than the first layer portion, and is constituted by a structure which alters a travelling path of positive holes injected from the p-emitter layer.

Growing community of inventors

Takahagi, Japan

Satoshi Matsuyoshi