Sumitomo Mitsubishi Silicon Corporation

Sumco Corporation

Satoshi Matagawa

Toru Taniguchi

Seiji Harada

Isoroku Ono

Etsuro Morita

Fumihiko Yoshida

Mitsuhiro Endo

Daisuke Hashimoto

Tomohiro Hashii

Provided is a method of lapping a semiconductor wafer, which can suppress the formation of a ring-shaped pattern in a nanotopography map. The method of lapping a semiconductor wafer includes: a stopping step of stopping lapping of a semiconductor wafer; a reversing step of reversing surfaces of the semiconductor wafer facing a upper plate and a lower plate after the stopping step; and a resuming step of resuming lapping of the semiconductor wafer after the reversing step while maintaining the reversal of the surfaces facing the plates.

Method of lapping semiconductor wafer and semiconductor wafer

A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.

Method of manufacturing semiconductor wafer

A method of manufacturing a semiconductor wafer, comprising the step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by using an abrasive cloth with a semiconductor wafer sink rate different in polishing from that of the other abrasive cloth for one of a polishing cloth () on an upper surface plate () and a polishing cloth () on a lower surface plate () so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer (W), or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.

Growing community of inventors

Tokyo, Japan

Satoshi Matagawa