National Institute of Advanced Industrial Science and Technology

Satoshi Kuroda

Kazutoshi Kojima

Shinsuke Harada

Kenji Fukuda

Junji Senzaki

Hajime Okumura

Ryouji Kosugi

Hajime Nat Inst Adv Ind Scie Tech Okumura

Kazutoshi Nat Inst Adv Ind Scie Tech Kojima

Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1&#xb0; off from the {0001} surface of silicon carbide having an &#x3b1;-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.

Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer

A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.

Semiconductor device

Growing community of inventors

Ibaraki, Japan

Satoshi Kuroda