Renesas Electronics Corporation

Jsr Corporation

Satoshi Kura

Mitsuo Nissa

Keiji Sakamoto

Toshiyuki Hayakawa

Ryo Kubota

Taichi Iwasaki

Nobutaka Nagai

Takuya Sano

Susumu Komiyama

Kazuhiro Iso

Teruo Aoyama

Toru Kawasaki

Takeo Nakamura

Akihiko Okubo

Naotaka Kamishita

A first transistor required for decreasing leak current and a second transistor required for compatibility of high speed operation and low power consumption can be formed over an identical substrate and sufficient performance can be provided to the two types of the transistors respectively. Decrease in the leak current is required for the first transistor. Less power consumption and high speed operation are required for the second transistor. The upper surface of a portion of a substrate in which the second diffusion layer is formed is lower than the upper surface of a portion of the substrate where the first diffusion layer is formed.

Method of manufacturing a semiconductor device with an upper surface of a substrate at different levels

Semiconductor device with an upper surface of a substrate at different levels and method of manufacturing the same

A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure having the first insulating film projected out from the edge towards the center of the hole; forming a lower electrode film as being extended over the top surface, side face and back surface of the first insulating film, and over the inner wall and bottom surface of the hole; filling a protective film in the hole; removing the lower electrode film specifically in portions fallen on the top surface and side face of the first insulating film; removing the protective film; and forming a cylindrical capacitor in the hole.

Semiconductor device and method of manufacturing the same

A thermoplastic resin composition contains (i) a polylactic acid, (ii) a polyolefin, and (iii) a compatibilizer (functional group-containing polymer that includes a functional group selected from functional groups X including a carboxyl group, an acid anhydride group, an epoxy group, a (meth)acryloyl group, an amino group, an alkoxysilyl group, a hydroxyl group, an isocyanate group, and an oxazoline group). The thermoplastic resin composition contains (iii-1) a functional group-containing hydrogenated diene polymer and (iii-2) a functional group-containing olefin polymer as the component (iii).

Thermoplastic resin composition and molded article obtained from the same

A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.

Semiconductor device and method of manufacturing semiconductor device

A method for producing an amino group-containing conjugated diene polymer includes polymerizing a conjugated diene compound in the presence of a reaction product of 1,3-bis(diphenylethenyl)benzene or a derivative thereof and an organolithium compound to obtain a conjugated diene polymer, and reacting the conjugated diene polymer with a modifier.

Amino group-containing conjugated diene polymer and method for producing the same, and block copolymer and method for producing the same

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Kanagawa, Japan

Satoshi Kura