Renesas Technology Corp.

Mitsubishi Paper Mills Limited

Satoshi Kume

Jiro Yugami

Takahiro Maruyama

Itaru Kanno

Koji Okazaki

Keisuke Iguchi

Shinichi Yamanari

Masahiko Higashi

Tetsunobu Murakata

Taizo Yoshimori

Eiji Miyoshi

In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.

Semiconductor device manufacturing method

A mounting device of a lithoplate, having a head clamp and a tail clamp of a lithoplate provided at a cutout portion of a plate cylinder, includes a register pin fixed to a lower blade of the head such that it penetrates through and projects from an upper blade of the head clamp. A clamp provided to the mounting device of a lithoplate includes a clamp having a register pin at an upper surface of an upper blade of the clamp and a roller which can freely rotate is provided at the position of a plate cylinder side opposed to the register pin. The mounting device of a lithoplate also includes a device for covering at least a part of a lithoplate holding tail edge at a region between a tip of a vise at a tail side and a plate cylinder to which no pressure is applied.

Method and device for mounting a lithoplate using register pins

Growing community of inventors

Tokyo, Japan

Satoshi Kume