Nissan Motor Company Limited

Komatsu Denshi Sinzoku Kabushiki

Satoshi Komiya

Kenichiro Koizumi

Masato Inoue

Yuji Ishihara

Kazuaki Nakajima

Yuichi Morinaka

Kazuhito Sugimoto

Tomohiro Koyahata

Hirofumi Kondou

Hitoshi Takagi

Shiro Yoshino

Kouichirou Hayashida

Masayoshi Danbata

A vehicle boundary layer air flow control structure is provided with a vehicle body and a side view mirror. The vehicle body includes an exterior contoured surface with an air flow deflector. The side view mirror is attached to the vehicle body to provide a diagonally rearward direction to be viewed from a driver's seat. The air flow deflector has a downward air flow guiding surface provided in a vehicle body region of the exterior contoured surface of the vehicle body along which an air flow heading toward the side view mirror passes. The downward air flow guiding surface extends in an air flow direction of the air flow with respect to the side view mirror to divert the air flow underneath the side view mirror.

Vehicle boundary layer air flow control structure

A vehicle boundary layer air flow control structure is provided with a vehicle body and a side view mirror. The vehicle body includes an exterior contoured surface with an air flow deflector. The side view mirror is attached to the vehicle body to provide a diagonally rearward direction to be viewed from a driver's seat. The air flow deflector has an inward longitudinal air flow guiding surface provided in a vehicle body region of the exterior contoured surface of the vehicle body along which an air flow heading toward the side view mirror passes. The inward longitudinal air flow guiding surface extends in an air flow direction of the air flow with respect to the side view mirror to divert the air flow inward of the side view mirror with respect to a vehicle widthwise direction.

A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of 5&times;10 atoms/cm to 1&times;10 atoms/cm . A silicon wafer having a nitrogen content of 5&times;10 atoms/cm to 1&times;10 atoms/cm which is suitable for being treated with heat in a non-oxidizing atmosphere is manufactured of an ingot produced by using the method. The method can be used for producing a silicon wafer being doped with nitrogen and having satisfactory characteristics for use in a semiconductor device.

Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer

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Yokohama, Japan

Satoshi Komiya