Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Satoshi Keino

Tetsuji Yamaguchi

Fumihiko Koga

Hideaki Togashi

Shintarou Hirata

Taiichiro Watanabe

Yukio Kaneda

Toyotaka Kataoka

Yoshihiro Ando

Tomohiro Wada

Shunsuke Ishii

A solid-state imaging device includes an imaging element array that includes M imaging elements arranged in a first direction and N imaging elements arranged in a second direction, that is, M×N imaging elements in total, each of the imaging elements including a photoelectric conversion unit that includes a photoelectric conversion layer, an insulation layer, a charge discharge electrode, an upper electrode, and a charge accumulation electrode. The photoelectric conversion layer is provided as a common layer at least for the N imaging elements. The photoelectric conversion unit of each of the imaging elements further includes a first charge transfer control electrode, a second charge transfer control electrode, and a light shielding layer. The photoelectric conversion layerincludes a photoelectric conversion layer-first regionA, a photoelectric conversion layer-second regionB, and a photoelectric conversion layer-third regionC. The light shielding layercovers at least the photoelectric conversion layer-second regionB and the photoelectric conversion layer-third regionC.

Solid-state imaging device and imaging method

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Imaging device having charge storage electrode, first electrode, second electrode and transfer control electrode, driving method for imaging device having the same, and electronic apparatus

Imaging device having a plurality of electrodes with a photoelectric conversion layer forming a photoelectric conversion unit

Imaging device having first, second and third electrodes with an insulating material and a photoelectric conversion layer and driving method for imaging device having the same, and electronic apparatus

Solid-state imaging devices, electronic apparatuses, and methods of forming image sensors are provided. A solid-state imaging device or an electronic apparatus incorporating a solid-state imaging device can include a substrate and at least a first photoelectric conversion element formed in the substrate. In addition, a region with a low dielectric constant is formed. The region can include a locally thin region formed in the substrate. An insulating film is at the first side of the substrate. Where the region includes a locally thin region, the interlayer insulating film can extend into that locally thin region. A first electrode is at a side of the interlayer insulating film opposite the substrate. The device further includes a second electrode, and a photoelectric conversion layer at least partially between the first electrode and the second electrode.

Solid-state imaging device

Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device

There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light, electrically conductive wirings, and a contact group including contacts that have different sizes and connect the semiconductor and the electrically conductive wirings.

Imaging device, imaging apparatus, production apparatus and method, and semiconductor device

Growing community of inventors

Kanagawa, Japan

Satoshi Keino