Meijo University

Kyocera Corporation

Toyoda Gosei Co., Ltd.

Ushio Denki Kabushiki Kaisha

Toshiba Materials Co., Ltd.

Koito Manufacturing Company, Ltd.

Japan Science and Technology Agency

National Institute for Materials Science

Kyoto Institute of Technology

Soko Kagaku Co., Ltd.

El-Seed Corporation

Uv Craftory Co., Ltd.

Satoshi Kamiyama

Isamu Akasaki

Motoaki Iwaya

Hiroshi Amano

Tetsuya Takeuchi

Kazuyoshi Iida

Akira Hirano

Ryosuke Hiramatsu

Hiroyuki Kinoshita

Hideaki Hirabayashi

Toshiyuki Kondo

Atsuya Sasaki

Fumiharu Teramae

Yuji Imai

Masaki Oya

Atsushi Suzuki

Koji Okuno

Cyril Pernot

Hiroyuki Matsunami

Tsukasa Kitano

Ryo Nakamura

Masahiro Yoshimoto

Naoki Sone

Takanori Yasuda

Koichi Mizutani

Jun Suda

Takuya Nishimura

Myunghee Kim

Hisanori Kojima

Toshiki Yasuda

Hideki Kasugai

Shigeki Otani

Toshiya Matsuda

Lu Weifang

To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Semiconductor device and method for producing semiconductor device

Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Semiconductor light emitting device and manufacturing method of semiconductor light emitting device

A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.

Semiconductor light-emitting element

A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01&#x2264;O/O&#x2264;0.5 is satisfied, where O(at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O(at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.

Semiconductor light-emitting element and method for manufacturing same

To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Group III nitride semiconductor light-emitting device and production method therefor

A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlGaN(0001) layer (1&#x2267;x&#x3e;0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlGaN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer

A light emitting diode is provided which can obtain emission at the shorter wavelength side of the emission range of normal 6H-type SiC doped with B and N. A porous layerconsisting of single crystal 6H-type SiC of porous state is formed on a SiC substrateof a light emitting diode element. Visible light is created from blue color to green color when the porous layeris excited by ultra violet light emitted from the nitride semiconductor layer.

Light emitting diode element with porous SiC emitting by donor acceptor pair

A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

Semiconductor light emitting element

To provide a light emitting device that does not experience a decline in radiant efficiency in use, enables luminous flux from LED elements to be increased, and white light of good color rendering to be produced, and heat generated by the LED elements to be smoothly transmitted to an SiC fluorescent substrate. The light emitting device is provided with first LED elements for emitting UV radiation, second LED elements for emitting visible light, an SiC fluorescent substrate that is mounted with the first LED elements and the second LED elements and is made of SiC doped with at least one of B and Al as well as N and emits visible light when excited by radiation emitted from the first LED elements, and has a body made of inorganic material.

Light emitting device and method for producing the light emitting device

A light emitting device that has a radiant efficiency that does not decline in use, enables luminous flux to be increased by a high electric current, and produces white light with good color rendering and a method for producing a light emitting device capable of smoothly transmitting heat generated by LED elements to a carrier substrate. The radiation emitting device has first LED elements for emitting UV radiation, second LED elements for emitting visible light, a substrate made of an inorganic material and which carries the first LED elements and the second LED elements, a body made of inorganic material containing the first LED elements, the second LED elements and the substrate, and an SiC fluorescent screen that is doped with at least one of B and Al as well as N and emits visible light when excited by radiation emitted from the first LED elements.

The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

Light-emitting semiconductor device

The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5&#xd7;10cm; donor impurities that are in a concentration less than 1&#xd7;10cmand greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5&#xd7;10cmand donor impurities that are in a concentration less than 1&#xd7;10cmand greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

SiC crystal and semiconductor device

The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.

Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element

The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

Method for fabricating a semiconductor device and semiconductor device

In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InAlGaN (0&#x2266;x&#x2266;0.21, 0&#x2266;y&#x2266;1).

Filter function-equipped optical sensor and flame sensor

Growing community of inventors

Nagoya, Japan

Satoshi Kamiyama