Matsushita Electric Industrial Co., Ltd.

Satoshi Kamiyama

Isao Kidoguchi

Kiyoshi Ohnaka

Hideto Adachi

Takeshi Uenoyama

Masaya Mannoh

Akihiko Ishibashi

Toshiya Fukuhisa

Ryoko Miyanaga

Yuzaburo Ban

Masahiro Kume

Ayumu Tsujimura

Akira Takamori

Masakatsu Suzuki

Takashi Nishikawa

Yasuhito Kumabuchi

Yoichi Sasai

Yoshiaki Hasegawa

Nobuyuki Uemura

Masaya Mannou

Yoshihiro Mori

Tohru Saitoh

Minoru Kubo

Shigeo Yoshii

Shinji Nakamura

Kenichi Matsuda

Tsuneo Mitsuyu

Yasushi Matsui

Kenji Harafuji

Kazuhiro Okawa

Kazuhiro Ohkawa

The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

Semiconductor light emitting element and method for fabricating the same

First, the substrate temperature is set to 1020&deg; C., and an n-type cladding layer ( ) made of n-type Al Ga N, an n-type optical guide layer ( ) made of n-type GaN, and a flatness maintenance layer ( ) made of n-type Al Ga N for maintaining the surface flatness of the n-type optical guide layer ( ) by suppressing re-evaporation of the constituent atoms of the n-type optical guide layer ( ), are grown in this order on a substrate ( ) made of sapphire. Then, the supply of a group III material gas is stopped, the substrate temperature is decreased to 780&deg; C., and the carrier gas is switched from a hydrogen gas to a nitrogen gas. Then, an active layer ( ) having a multiple quantum well structure is grown by introducing NH as a group V source and selectively introducing TMI and TMG as a group III source.

Method for fabricating nitride semiconductor device

A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al Ga N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al Ga N/Al Ga N, a p-type leak barrier layer of p-type Al Ga N P and a p-type cladding layer of p-type Al Ga N P are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.

Semiconductor laser device

A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al,Ga,N cladding layer, an n-type Al,Ga,N optical guide layer, a multi-quantum well active layer, in which Al,Ga,N well layers and Al,Ga,N barrier layers are alternately stacked, an Mg-doped p-type Al,Ga,N optical guide layer, a p-type Al,Ga,N,P,cladding layer and a p-type GaN contact layer are stacked in this order on an active region on the upper surface of the n-type contact layer.

The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.

Light-emitting diode device

A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.

Semiconductor laser device and optical disk apparatus using the same

On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

Low barrier ohmic contact for semiconductor light emitting device

Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.

Optical disk recording/reproducing method and apparatus for preventing

A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.

Semiconductor laser device with an optical guide layer

A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.

Semiconductor laser and a method for producing the same

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Sanda, Japan

Satoshi Kamiyama