Nissan Chemical Corporation

Nissan Chemical Industries Limited

Satoshi Kamibayashi

Hiroshi Ogino

Tetsuya Shinjo

Shunsuke Moriya

Kazuhiro Sawada

Takafumi Endo

Yasunobu Someya

Tomoyuki Enomoto

Hirokazu Nishimaki

Ryo Karasawa

Ryuta Mizuochi

Yuichi Goto

Yuki Endo

Takahisa Okuno

A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.

Resist underlayer film forming composition having a disulfide structure

A composition contains an organic solvent and compound (formula (1)), theoretical molecular weight 999 or less. (Z1 contains a nitrogen-containing heterocyclic ring; U represents a monovalent organic group (formula (2)); and p represents 2 to 4.) (In formula (2), R1 represents an alkylene group having 1 to 4 carbon atoms; A1 to A3 represent a hydrogen atom, or methyl or ethyl group: X represents —COO—, —OCO—, —O—, —S— or —NRa—; Ra represents a hydrogen atom or methyl group; Y represents a direct bond or optionally substituted alkylene group having 1 to 4 carbon atoms; R2, R3 and R4 represent a hydrogen atom or optionally substituted alkyl group having 1 to 10 carbon atoms or aryl group having 6 to 40 carbon atoms; R5 represents a hydrogen atom or hydroxy group; n represents 0 or 1; m1 and m2 represent 0 or 1; and * represents a binding site to Z1.)

Resist underlayer film-forming composition having diol structure

A temporary adhesive has excellent spin coating properties of a circuit side of a wafer and a support, and excellent heat resistance when the circuit side of the wafer or the support is attached to an adhesion layer or a rear surface of the wafer is processed, and is capable of easily separating the circuit side of the wafer from the support after polishing the rear surface of the wafer, and simply removing an adhesive attached to the wafer or the support after the separation. The adhesive contains a component (A) to be cured by a hydrosilylation reaction, and a component (B) containing an epoxy-modified polyorganosiloxane at a ratio in % by mass of the component (A) to the component (B) of 99.995:0.005 to 30:70. The component (B) is an epoxy-modified polyorganosiloxane having an epoxy value of 0.1 to 5.

Temporary adhesive containing epoxy-modified polysiloxane

A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.

Laminated body including novolac resin as peeling layer

A temporary adhesive is good peelability, heat resistance and cleaning removability after polishing of the rear surface of the wafer. A layered body for processing a rear surface of a wafer opposite to a circuit surface of the wafer, the layered body being a temporary adhesive loaded between a support and circuit surface of the wafer and including an adhesive layer (A) that includes a polyorganosiloxane to be cured by a hydrosilylation reaction and is releasably bonded, and a separation layer (B) includes a polyorganosiloxane and is releasably bonded, in which the polyorganosiloxane forming the separation layer (B) is a polyorganosiloxane containing a siloxane unit of RRSiO(provided that each R is bonded to a silicon atom as a Si&#x2014;C bond), and at least one R is an aralkyl group, epoxy group, or phenyl group. Methods for producing and separating these layered bodies and composition for forming the separation layer.

Layered body of temporary adhesive

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Toyama, Japan

Satoshi Kamibayashi