Sandisk Technologies Inc.

Satoshi Kamata

Yuji Takahashi

Takuya Futase

Ryo Nakamura

Yoko Furihata

Kotaro Jinnouchi

Erika Kanezaki

A dielectric layer extending over a substrate has alternating first and second trenches extending in a first direction. The first trenches have a first shape in cross section along a plane that is perpendicular to the first direction and the second trenches have a second shape in cross section along the plane. Bit lines are located in at least the first trenches.

Alternating sidewall assisted patterning

A pattern of parallel lines defines first regions where no conductive material is to be located, a distance between adjacent lines in the first regions being smaller than a predetermined distance, and defines second regions where conductive material is to be located, a distance between adjacent lines in the second regions being larger than the predetermined distance. A subsequent layer caps air gaps between lines in the first regions. Conductive material is then deposited and planarized to form lines of conductive material in the second regions.

Air gaps structures for damascene metal patterning

Growing community of inventors

Yokkaichi, Japan

Satoshi Kamata