Rohm Co., Ltd.

Satoshi Kageyama

Yuichi Nakao

Bungo Tanaka

Keiji Wada

Isamu Nishimura

Michihiko Mifuji

Masaru Naitou

Daiki Yanagishima

Toshiyuki Ishikawa

Kosei Osada

Tetsuya Kagawa

Nobuyuki Kasahara

Yoshihisa Takada

Kenji Fujii

Katsumi Sameshima

Takahisa Yamaha

Ryosuke Nakagawa

Ryoutaro Yagi

A semiconductor device includes: a conductive portion; and a semiconductor element mounted on the conductive portion, wherein the conductive portion is made of a plating layer, wherein the conductive portion includes a mounting portion having a mounting surface on which the semiconductor element is mounted, and a terminal portion extending to an opposite side of the semiconductor element with respect to the mounting portion, wherein the mounting portion extends in a first direction along the mounting surface more than the terminal portion, and wherein the mounting portion and the terminal portion are integrally formed.

Semiconductor device and method of manufacturing semiconductor device

The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Semiconductor device and semiconductor module

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

Semiconductor device

A thermal print head includes a head substrate () having a main surface () on which a convex part () is formed, a resistor layer () that is formed on the main surface () and the convex part (), a wiring layer () that covers the resistor layer () such that the resistor layer () is exposed at a heat generating part () formed at a part of the convex part (), and a protective layer () that is formed on the main surface () of the head substrate () and covers the resistor layer () and the wiring layer (). The resistor layer () has a main resistor layer that contains tantalum, and at least one of a first sub-resistor layer that contains tantalum nitride and is stacked below the tantalum layer and a second sub-resistor layer that contains tantalum nitride and is stacked on the tantalum layer. The nitrogen content of tantalum nitride contained in the first sub-resistor layer and the second sub-resistor layer exceeds a predetermined value such that the tantalum nitride is deposited in a stable structure.

Thermal print head, manufacturing method of the same, and thermal printer

There is provided a semiconductor device that includes a wiring layer having a main surface and a rear surface which face opposite sides in a thickness direction, a first insulating layer covering an entirety of the rear surface, a second insulating layer which is in contact with the main surface, a semiconductor element which faces the second insulating layer and is mounted on the wiring layer, and a sealing resin which is in contact with the second insulating layer and covers the semiconductor element, wherein surface roughness of the main surface is larger than surface roughness of the rear surface.

A semiconductor device includes a semiconductor substrate, an insulating film formed above the semiconductor substrate, a wiring having copper as a main component and formed above the insulating film, and a barrier metal film having a higher modulus of rigidity than copper and interposed between the insulating film and the wiring. The barrier metal film may have a lower thermal expansion coefficient than copper.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer.

Growing community of inventors

Kyoto, Japan

Satoshi Kageyama