Renesas Electronics Corporation

Nitto-denko Corporation

Nippon Shokubai Co., Ltd.

Satoshi Itou

Tatsuya Usami

Takashi Ogura

Masayuki Satake

Akira Yajima

Takehiko Maeda

Hitoshi Kasai

Yoshitake Kato

Satoshi Kodama

Youichi Yamamoto

Takamasa Itou

Tatsuya Yamasaki

Misato Sakamoto

Fumiyoshi Kawashiro

Michihito Ooishi

Narifumi Ueda

Shuuichirou Ueno

An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film. The metal film is made of one or more metals selected from the group consisting of Pd, Au, Ru, Rh, Pt, and Ir.

Semiconductor device and method of manufacturing the same

A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiON(where x&#x3e;0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W.

Semiconductor device

A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Semiconductor integrated circuit device and method for producing the same

The present invention provides a polarizing plate excellent in adherence (particularly, under high-temperature and high-humidity conditions) between a polarizer and a protective film. The polarizing plate of the present invention includes: a polarizer; an adhesive layer; an easy-adhesion layer formed of an easy-adhesive composition containing a urethane resin having a carboxyl group and a cross-linking agent; and a protective film containing a (meth)acrylic resin.

Polarizing plate, and image display device having polarizing plate

Growing community of inventors

Ibaraki, Japan

Satoshi Itou