Sony Corporation

Autoliv Development Ab

Amada Company, Limited

Satoshi Ito

Akira Ishibashi

Kazushi Nakano

Hiroyuki Okuyama

Masao Ikeda

Masaharu Nagai

Tomonori Hino

Norikazu Nakayama

Shigetaka Tomiya

Katsuhiro Akimoto

Futoshi Hiei

Atsushi Toda

Satoshi Taniguchi

Masakazu Ukita

Etsuo Morita

Masafumi Ozawa

Atsushi Tamura

Satoshi Matsumoto

Akifumi Hanawa

Masashi Shiraishi

Kenji Kondo

Takao Miyajima

Koshi Tamamura

Toyoharu Ohata

Hironori Tsukamoto

Fumiyo Narui

Yoshino Iochi

Akira Ishibash

Reiko Takeishi

Rikako Minatoya

Atsuya Tanaka

The pedestrian airbag device includes an airbag cushion that expands and deploys from below the front hood toward the windshield. The airbag cushion has a main chamber covering at least the lower part of the windshield, a pillar chamber covering the A-pillar, provided at both ends of the main chamber in the vehicle width direction, a compartment wall partitioning the main chamber and the pillar chamber, an inner vent penetrating the compartment wall through which gas can pass, a bridge over the inner vent, and a patch attached so as to cover the inner vent on the pillar chamber side of the compartment wall, such that a portion is separable from the compartment wall.

Airbag device for pedestrian

An airbag that includes a center chamber extending in a width direction of the vehicle in the vicinity of a lower edge of a windshield, and side chambers extending upward from both left and right end sections of the center chamber at least along an A-pillar, and is configured such that gas supplied from the inflator flows from the center chamber to the side chamber, a folded section is formed at which the side chamber is folded back toward the center chamber to be overlapped in a stowed state of the airbag, a pair of left and right partition panels for partitioning the center chamber and the side chambers are provided in the vicinity of the folded sections, and each of the pair of partition panels is provided with a check valve that prevents backflow of gas from the side chamber to the center chamber.

Air bag device for pedestrian protection and method for producing same

Provided is a laser processing machine including a laser head capable of irradiating a workpiece with laser beam, a belt conveyor provided away in an irradiation direction of the laser beam, and a control unit configured to control operations of the laser head and the belt conveyor. The laser head is configured to be movable along at least a rotating direction of the belt conveyor. The control unit is configured to control, in a case where a moving direction and a moving speed of the laser head match the rotating direction and a rotating speed of the belt conveyor during the irradiation with the laser beam, the operation of at least one of the laser head and the belt conveyor in order to avoid the matching.

Laser processing machine and control method therefor

A method for making a semiconductor device comprises: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; wherein

Method for making semiconductor device

The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

Method of fabricating of light emitting device with controlled lattice

Method of producing film of nitrogen-doped II-VI group compound

A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

Semiconductor light emitting device with a Mg superlattice structure

An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5.

Epitaxial growth method of semiconductor

A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

Semiconductor light emitting device with defect decomposing and blocking

A semiconductor light-emitting device capable of emitting blue to green light is disclosed. The device comprises a first cladding layer of the first conduction type stacked on a compound semiconductor substrate and made of ZnMgSSe compound semiconductor; an active layer stacked on the first cladding layer; a second cladding layer of the second conduction type stacked on the active layer and made of a ZnMgSSe compound semiconductor; and ZnSSe compound semiconductor layers provided on the second cladding layer and/or between the compound semiconductor substrate and the first cladding layer. The device has good optical confinement characteristics and carrier confinement characteristics, generates only a small amount of heat during its operation, and is fabricated easily.

Semiconductor laser

The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

Semiconductor light emitting device with lattice-matching and

A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

Semiconductor display device and a method of fabricating the same

A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.

II/VI-compound semiconductor light emitting device

A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer.

Growing community of inventors

Kanagawa, Japan

Satoshi Ito