Seiko Epson Corporation

Satoshi Ito

Yoshitake Tateno

Shotaro Izawa

Hiroyuki Oikawa

Hidenori Sokabe

Takafumi Egami

Daisuke Sawaki

Masashi Nakagawa

Kazuhiko Okawa

Hiroshi Seki

Mitsutaka Ohori

Takuto Watanabe

Yohei Ono

An electro-optical device includes a substrate, a pixel electrode disposed at the substrate, and a pixel circuit portion disposed between the substrate and the pixel electrode. The pixel circuit portion includes a scanning line disposed along a first direction, a data line disposed along a second direction intersecting the first direction, a first constant potential line disposed along the scanning line, a second constant potential line disposed along the data line, and a transistor disposed corresponding to an intersection position of the scanning line and the data line and including a gate electrode electrically coupled to the scanning line, a source region electrically coupled to the data line, and a drain region electrically coupled to the pixel electrode. The pixel circuit portion also includes a coupling portion disposed corresponding to the intersection position and configured to electrically couple the first constant potential line and the second constant potential line.

Electro-optical device and electronic apparatus

An electro-optical device includes a pixel electrode disposed in a display area, a first wiring line, a second wiring line, an insulating layer disposed between the first wiring line and the second wiring line, a capacitor disposed in the display area, and including a first electrode, a capacitance insulation film, and a second electrode stacked in this order on the second wiring layer side surface of the insulating layer, with the first electrode being electrically connected to the second wiring line, and a relay electrode disposed outside the display area, and through the insulating layer, contacted with the first wiring line at the insulating layer side surface of the first wiring layer line and the second wiring line at an opposite side surface of the second wiring line with respect to the insulating layer side.

Electro-optical device, method for manufacturing electro-optical device, and electronic apparatus

An electro-optical device includes a wiring substrate including a wiring line, a common electrode, a conduction member that is electrically conductive, the conduction member being configured to electrically couple the wiring line and the common electrode, a pixel electrode disposed between the wiring substrate and the common electrode, and an electro-optical layer disposed between the pixel electrode and the common electrode. The wiring substrate includes: an insulating layer disposed between the wiring line and the common electrode, a conduction electrode between the insulating layer and the common electrode and in contact with the insulating layer, the conduction member being disposed at the conduction electrode, and a contact portion composed of a material different from the conduction electrode and penetrating the insulating layer, the contact portion being configured to electrically couple the conduction electrode and the wiring line.

An optical substrate includes a first substrate, a light-transmitting layer disposed at the first substrate, concave portions provided in the light-transmitting layer, and a lens layer disposed so as to fill the concave portions. The light-transmitting layer is constituted by a plurality of light-transmitting layers, and an edge of the concave portion is in contact with an edge of an adjacent concave portion adjacent to the concave portion.

Optical substrate, electro-optical device, electronic apparatus, and method for manufacturing optical substrate

In a liquid crystal device, an intermediate refractive index film including a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film is provided between an oriented film formed of a diagonally vapor-deposited film of silicon oxide and an electrode containing ITO. Thus, because there are no interfaces having a large refractive index difference between the oriented film and the electrode, reflection between the oriented film and the electrode can be suppressed. A high density silicon oxide film is formed between the intermediate refractive index film and the oriented film. The high density silicon oxide film is formed by an atomic deposition method, thus is appropriately formed inside a contact hole.

Liquid crystal device and electronic apparatus

An electro-optical device includes a first substrate including a plurality of pixel electrodes, a second substrate including a common electrode, and an electro-optical layer disposed between the plurality of pixel electrodes and the common electrode, optical characteristics of the electro-optical layer changing according to an electric field. One of the first substrate and the second substrate includes a base material composed of an inorganic material and having insulating and transmission properties, and a light shielding portion having light shielding properties and including a first film containing tungsten silicide, a second film containing titanium nitride or tungsten nitride, and a third film containing tungsten. The first film, the second film, and the third film are disposed in this order from the base material.

Electro-optical device, manufacturing method of electro-optical device, and electronic apparatus

A light shielding area including a first conductive layer, a second conductive layer, a first conductor part disposed between the first conductive layer and the second conductive layer, and a transistor surrounded by the first conductive layer, the second conductive layer, and the first conductor part, and a light transmission area surrounded by the light shielding area are provided, wherein an edge of the first conductor part forms a part of a boundary between the light shielding area and the light transmission area.

An electro-optical device. The electro-optical device includes an pixel electrode that applies the electric field to the electro-optical layer, a transistor that includes a semiconductor layer including a drain region, a capacitance element that includes a first capacitance electrode and a second capacitance electrode, an electrode contact coupled to the pixel electrode, and a drain relay electrode electrically coupled to the drain region. The pixel electrode contact is coupled to the second capacitance electrode and the drain relay electrode.

A liquid crystal device includes, on a first base material, pixels and a capacitive element disposed in a light shielding region between the pixels, and the capacitive element includes a first capacitive wiring disposed along the light shielding region, a dielectric layer that covers at least consecutive three surfaces (a surface O, a surface P and a surface Q) of the first capacitive wiring, and a second capacitive wiring that faces at least the consecutive three surfaces of the first capacitive wiring through the dielectric layer.

Electric optical device, electronic device, and manufacturing method of electric optical device

An electro-optical device includes a translucent substrate, a transistor, a light-shielding body having light-shielding properties, including a metal and disposed between the substrate and the transistor, a first insulating layer having insulating properties and disposed between the light-shielding body and the transistor, the first insulating layer being in contact with the light-shielding body, and a second insulating layer having insulating properties and disposed between the first insulating layer and the transistor, the second insulating layer being in contact with the first insulating layer. A content of a predetermined element that is not an element of a main component in the first insulating layer is higher than a content of the predetermined element in the second insulating layer.

Electro-optical device having predetermined element in insulating layers, electronic apparatus and method for manufacturing electro-optical device

An element substrate serving as a substrate for an electro-optical device includes a base material, a TFT disposed on the base material, the TFT including a semiconductor layer, and a first insulating film including a silicon oxide film disposed between the base material and the semiconductor layer, wherein a content of hydrogen in the silicon oxide film is 1.0&#xd7;10atoms/cmor more but less than 1.0&#xd7;10atoms/cm.

Substrate for electro-optical device, electro-optical device, and electronic apparatus

Included are: a semiconductor layer including a drain region, a channel region, and a second LDD region between the drain region and the channel region; a gate electrode disposed overlapping the channel region; a gate wiring line electrically coupled to the gate electrode; and a second light shielding portion disposed between the second LDD region and the gate wiring line and overlapping the second LDD region and the gate wiring line in plan view.

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Eniwa, Japan

Satoshi Ito