Sanyo Electric Co., Ltd.

Sony Corporation

Other

Satoshi Ishida

Tsutomu Yamada

Keiichi Sano

Nobuhiko Oda

Shigeru Noguchi

Hiroshi Iwata

Kiyoshi Yoneda

Norio Koma

Masaaki Aota

Yasushi Shimogaichi

Kazuhiro Inoue

Yasuo Nakahara

Shinji Ogawa

Shoichiro Nakayama

Tohru Yamashita

Hiroyuki Kuriyama

Koji Nishio

Hitoshi Hirano

Keiichi Kuramoto

Yoichi Domoto

Seiichi Kiyama

Hiroaki Izu

Ikuro Nakane

Akira Terakawa

Yasuaki Yamamoto

Hiroshi Hosokawa

Takashi Kuwahara

Takahisa Sakakibara

Kazuyoshi Sakai

Tomoyasu Hirata

Kosuke Takasu

Disclosed herein is a liquid crystal display panel of a transverse electric field system, including: a liquid crystal layer; and a pair of substrates configured to be so disposed as to be opposed to each other and sandwich the liquid crystal layer. In the liquid crystal display panel, a first electrode and a second electrode for applying an electric field to the liquid crystal layer and an alignment film are formed in a plurality of pixel areas that form a display area in one of the pair of substrates, a planarization insulating film is formed on a surface of at least one of the first electrode and the second electrode and across an entire surface of the pixel areas, and the alignment film is formed on a surface of the planarization insulating film.

Liquid crystal display panel

An electro-optic device includes a pixel section and a terminal section through which a semiconductor circuit or a wiring board is mounted around the pixel section. The terminal section has a multilayer structure including a terminal connection wire including an uppermost layer containing titanium, a terminal interlayer made of an electroconductive material capable of being wet-etched, and a terminal transparent electroconductive film in that order from below.

Electro-optic device having terminal section and pixel section with particular multilayer structures

A liquid crystal display device comprising: a switching element that has a drain electrode and that is arranged on a substrate; a first insulating film that covers the switching element and that has a first opening on the drain electrode; a first etching stopper electrode that is formed in the first opening and that is connected to the drain electrode; a common electrode that is arranged on the first insulating film; a second insulating film that covers the first etching stopper electrode and the common electrode, and that has a second opening on the first etching stopper electrode; and a pixel electrode that is connected through the second opening to the first etching stopper electrode and that extends onto the second insulating film so as to face the common electrode.

Liquid crystal display device having etching stopper electrode and method of manufacturing the liquid crystal display device

On a first substrate are formed a TFT provided to each pixel, an insulating film which covers the TFT, and a reflective layer which is provided on the insulating film so as to be insulated from the TFT and reflects light incident from a second substrate side. The reflective layer is covered with a passivation film on which a first electrode made of a transparent conductive material, such as ITO having the work function equivalent to a second electrode, is formed and connected to the TFT. The passivation film covering the reflective layer prevents the reflective surface of the reflective layer from deteriorating in reflection properties during a process for connecting the TFT and the first electrode. Further, the first and second electrodes having similar characteristics can symmetrically AC drive the liquid crystal layer.

Display apparatus and manufacturing method thereof

A reflective layer for reflecting light incident from a second substrate side and transmitting through a second electrode made of ITO or the like is formed above a first substrate, a switching element provided for each pixel, and an insulating film covering the switching element, the reflective layer being insulated from the switching element. A first electrode having a work function similar to the second electrode and made of a transparent conductive material such as ITO is formed more proximate to a liquid crystal layer than is the reflective layer and is connected to the switching element. The thickness of the first electrode is set to 100 &#x212b; or less or in a range approximately from 750 &#x212b; to 1250 &#x212b;. Alternatively, the switching element maybe connected to the reflective electrode, the first electrode and the reflective electrode which are formed with an insulating film therebetween may be capacitively coupled, and the first electrode may be driven by the reflective electrode via the capacitor.

Liquid crystal display apparatus having reflective layer

Liquid crystal display apparatus having insulated reflective layer and manufacturing method thereof

Liquid crystal display apparatus having a transparent layer covering a reflective layer

A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a substantially rectangular cross section, such that the gate electrode has a substantially constant thermal conductivity over its area. The TFT has a uniform device characteristic.

Thin film transistor and method of fabricating the same

The body of a micromachine has a plurality of energy-power converting means for receiving different forms of energy including rays, microwaves and sound waves and converting the different forms of energy to electric power, i.e., photoelectromotive devices, a microwave-power converter and an acousto-electromotive device. The electric power obtained by these means is supplied to a drive system and an operation system incorporated in the machine body.

Micromachines

A photovoltaic device having a tab soldered onto it for modularization, includes a first conductivity type crystalline semiconductor layer, a collector electrode electrically connected to the tab by soldering, a short-preventing layer formed under a soldered portion of the collector electrode, and a second, opposite conductivity type amorphous semiconductor layer formed above the crystalline semiconductor layer. The short-preventing layer is an insulating layer of SiO.sub.2 or the like, or an opposite conductivity type doped layer formed in the first conductivity type crystalline semiconductor layer.

Photovoltaic device and method of manufacturing the same

A manufacturing method of a thin film transistor, wherein a laminated body consisting of an intrinsic amorphous silicon layer and a conductive amorphous silicon layer is formed on a glass substrate, and annealed at low temperatures not higher than 600.degree. C. thereby obtaining a polycrystalline silicon film. The conductive amorphous silicon layer gives girth to a core for polycrystallization, and therefore the intrinsic amorphous silicon layer is easily recrystallized by annealing at low temperatures.

Manufacturing method of thin film transistor

In a method of fabricating a semiconductor device according to the present invention, a semiconductor film is formed on a substrate, and an insulator film is formed so as to cover the semiconductor film. Then, a dopant source is arranged on the insulator film and then, a region for electrical contact is irradiated with a high-energy beam through the dopant source. Consequently, the insulator film and the semiconductor film in the irradiated region are melted, to form a polycrystalline contact region having impurities supplied from the dopant source doped therein. Thus, the high-energy beam is irradiated to the region for electrical contact through the dopant source to form the polycrystalline contact region, thereby to make it possible to omit the patterning process such as etching processing for providing a contact hole.

Method of fabricating semiconductor device

A semiconductor device according to the present invention comprises a semiconductor thin film, and first and second insulator films formed in such arrangement that the semiconductor thin film being sandwiched therebetween. First and second graded layers each containing a constitutent element of the semiconductor thin film and impurities and having a content of the impurities decreased in the direction of the semiconductor thin film are interposed between the semiconductor thin film and the respective insulator films, thereby to relax internal stress produced in the junction interfaces of the semiconductor thin film and the insulator films and to prevent cracking from occurring in the junction interfaces.

Semiconductor device which relieves internal stress and prevents cracking

Growing community of inventors

Ohgaki, Japan

Satoshi Ishida