Seiko Epson Corporation

Japan Advanced Institute of Science and Technology

Eisai R&d Management Co., Ltd.

Sumitomo Seika Chemicals Co., Ltd.

Tdk Corporation

Japan Science and Technology Agency

Adamant Namiki Precision Jewel Co., Ltd.

Prism Pharma Co., Ltd.

Wakunaga Pharmaceutical Co., Ltd.

Neugen Pharma Inc.

Satoshi Inoue

Tatsuya Shimoda

Kiyoshi Nishioka

Wakao Miyazawa

Satoru Miyashita

Keigo Tanaka

Nobutaka Fujimoto

Masayuki Matsukura

Kazutaka Nakamoto

Norio Murai

Shuji Shirotori

Shinya Abe

Toyoaki Tanaka

Kazuhiro Fukada

Piero Migliorato

Masahiro Suzuki

Shuichi Karashima

Mutsumi Kimura

Toru Haneda

Takahiro Usui

Takaaki Miyasako

Yoshiro Nakagawa

Jinwang Li

Tue Trong Phan

Takeshi Kijima

Ryoichi Nozawa

Mitsutoshi Miyasaka

Kazunori Tanaka

Ichio Yudasaka

Tomoki Kawakita

Yojiro Matsueda

Hideyuki Kawai

Norihiro Ueda

Sumio Utsunomiya

Tokuroh Ozawa

Hiroyuki Hara

Satoshi Takenaka

Yuji Yamamoto

Itaru Tsukada

Katsura Hata

Seiichiro Higashi

Takashi Nakazawa

Naoaki Watanabe

Yoshiaki Ohashi

Shuichi Suzuki

Kiyofumi Kitawada

Joh-E Ikeda

Minoru Matsuo

Daisuke Ito

Hiroyuki Ohshima

Kentaro Iso

Yosuke Kaburagi

Tomoki Ariga

Nishioka Kiyoshi

Noriaki Hirayama

Takuya Kanno

The etching maskfor screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching maskincluding aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel) which is not protected by the etching mask; and a heating step of, after the contact step, heating the oxide layer (the channel) and the etching maskto or above a temperature at which the etching maskis decomposed.

Method of producing etching mask, etching mask precursor, and oxide layer, and method of manufacturing thin film transistor

A thin film transistoraccording to the invention includes a gate electrode, a channel, and a gate insulating layerprovided between the gate electrodeand the channeland made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channelis made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Method for manufacturing thin film transistor with oxide semiconductor channel

A laminate by using a paste or solution containing aliphatic polycarbonates having an etching mask function is provided. A method of producing a laminate of the present invention includes a pattern forming step of forming a patternof a first oxide precursor layer in which a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates on an oxide layeror on the second oxide precursor layer to be oxidized into the oxide layeran etching step of, after the pattern forming step, etching the oxide layeror the second oxide precursor layer that is not protected by the patternand a heating step of, after the etching step, heating the oxide layeror the second oxide precursor layer, and the first oxide precursor layer to a temperature at which the binder is decomposed or higher.

Laminate, etching mask, method of producing laminate, method of producing etching mask, and method of producing thin film transistor

It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.

Semiconductor device, method for producing same and aliphatic polycarbonate

[Problem] Provided is a composite member which can contribute to simple formation and/or increased quality of fine wiring. [Solution] A composite memberaccording to one embodiment of the present invention includes a base material, an aliphatic polycarbonate-containing layer with multiple island-shaped portions arranged on the base material, and a metal ink, wherein at least a surface of the aliphatic polycarbonate-containing layer with multiple island-shaped portions has a contact angle of 50&#xb0; or more between pure water and the surface when exposed to ultraviolet light including a wavelength of 180 nm or more and 370 nm or less for 15 minutes, and the metal ink is arranged on the base material at at least a portion of a region sandwiched by the precursor layers.

Composite member and method of manufacturing the same, and aliphatic polycarbonate-containing layer

There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layerincludes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a &#x3b2;-BiNbO-type crystal structure. The oxide layerhas a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layerin a temperature range of 25&#xb0; C. or more and 120&#xb0; C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layerin the temperature range.

Oxide dielectric and method for manufacturing same, and solid state electronic device and method for manufacturing same

An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.

Oxide precursor, oxide layer, semiconductor element, and electronic device, and method of producing oxide layer and method of producing semiconductor element

Intermediate semiconductor device having an aliphatic polycarbonate layer

It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layerthat covers a gate electrode layerdisposed above a semiconductor layerwith a gate insulatorbeing interposed between the gate electrode layerand the semiconductor layer, and also covers the semiconductor layer, and has a dopant causing the semiconductor layerto become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layerand decomposition of the aliphatic polycarbonate layer

Semiconductor device having a decomposed aliphatic polycarbonate layer

The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device

Thin film transistor and method for manufacturing thin film transistor

A compound represented by formula (1) or pharmaceutically acceptable salt thereof: wherein Ris a Calkyl group; Rand Rare the same or different from each other and each is a hydrogen atom or a Calkyl group; X, Xand Xare the same or different from each other and each is a hydrogen atom or a halogen atom; and Xis a hydrogen atom or &#x2014;P(&#x2550;O)(OH)has a Wnt Pathway modulating activity.

(6S,9aS)-N-benzyl-6-[(4-hydroxyphenyl)methyl]-4,7-dioxo-8-({6-[3-(piperazin-1-yl)azetidin-1-yl]pyridin-2-yl}methyl)-2-(prop-2-en-1-yl)-octahydro-1H-pyrazino[2,1-c][1,2,4]triazine-1-carboxamide compound

An object of the present invention is to provide an antifungal agent which has excellent antifungal effects and is superior in terms of its physical properties, safety and metabolic stability. According to the present invention, there is disclosed a compound represented by the following formula (I), or a salt thereof: wherein R, R, X, Y, ring A, Z, Rand Rare as defined in the specification.

Heterocycles substituted pyridine derivatives and antifungal agent containing thereof

The present invention provides an antifungal agent that has excellent antifungal action, and is also excellent in terms of its properties, safety, and metabolic stability. The present invention discloses a compound represented by the following formula I or a salt thereof, and an antifungal agent comprising the compound or the salt: wherein Rrepresents a hydrogen atom, a halogen atom, an amino group, a Calkyl group, a Calkoxy group, or a C-alkoxy-C-alkyl group; Rrepresents a hydrogen atom or an amino group; X, Y, Z, and W independently represent a nitrogen atom, an oxygen atom, a sulfur atom, or &#x2014;CH&#x2014;, provided that at least two among X, Y, and W are nitrogen atoms; the ring A represents a 5- or 6-membered heteroaryl ring or a benzene ring; Q represents a methylene group, an oxygen atom, &#x2014;CHO&#x2014;, &#x2014;OCH&#x2014;, &#x2014;NH&#x2014;, &#x2014;NHCH&#x2014;, or &#x2014;CHNH&#x2014;; and Rrepresents a Calkyl group, a Ccycloalkyl group, a Caryl group, or a 5- or 6-membered heteroaryl group, each of which may have one or two substituents.

Pyridine derivative substituted by heteroaryl ring, and antifungal agent comprising the same

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Chino, Japan

Satoshi Inoue