Fujitsu Corporation

Fujitsu Microelectronics Limited

Fujitsu Microelectronics Lmiited

Satoshi Inagaki

Takeshi Ito

Kazuo Kawamura

Yasunori Uchino

When an STI element isolation structure is formed, it is formed in such a manner that its upper portion protrudes further than the surface of a substrate than by a normal STI method, and a dummy electrode pattern is formed in a gate electrode forming portion. After a source/drain is formed in alignment with a gap portion, a conductive layer formed by filling the gap portion with W is formed, the dummy electrode pattern is removed, and a gate insulating film and a gate electrode are formed.

Semiconductor device with element isolation structure

A semiconductor device formed by the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.

Semiconductor device and a fabrication process thereof

A method of fabricating a semiconductor device comprises the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.

A method of fabricating a semiconductor device includes the steps depositing a metal film on a silicon substrate so as to cover a polysilicon gate electrode and a diffusion region on the silicon substrate, forming a silicide layer by causing a reaction between a surface of the polysilicon gate electrode and the metal film and between a surface of the diffusion region and the metal film, and removing the metal film after the step of forming the silicide layer, wherein there is provided, before the deposition step of the metal film, a step of removing a native oxide film from a surface of the polysilicon gate electrode and a surface of the diffusion region, and wherein there is provided, after the step of removing the native oxide film, the step of forming a chemical oxide film on the surface of the polysilicon gate electrode and the surface of the diffusion region.

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Kawasaki, Japan

Satoshi Inagaki