Other

Hitachi, Ltd.

Renesas Technology Corp.

Taiyo Yuden Co., Ltd.

Renesas Electronics Corporation

Satoshi Imasu

Ikuo Yoshida

Takahiro Naito

Yasuhiro Naka

Akira Yamagiwa

Naotaka Tanaka

Tetsuya Hayashida

Shinobu Takeura

Takafumi Betsui

Norihiko Sugita

Takahiro Sugimura

Takashi Matsuda

Masafumi Iwaki

Shinpei Miura

Kentaro Nakamura

Masanao Sato

Toshihiko Sato

Yoshiyuki Kado

Naohiro Makihira

Fumiya Matsukura

Kazuyuki Taguchi

Norio Kishikawa

An acoustic wave device includes: a piezoelectric substrate; and a pair of comb-shaped electrodes located on the piezoelectric substrate, each of the comb-shaped electrodes including a plurality of electrode fingers, side surfaces facing each other of the electrode fingers having a plurality of protrusion portions and a plurality of recessed portions arranged in an extension direction of the electrode fingers, ends of the protrusion portions and the recessed portions narrowing.

Acoustic wave device, filter, and multiplexer

An acoustic wave resonator includes: an IDT located on a piezoelectric substrate, including comb-shaped electrodes facing each other and including electrode fingers and a bus bar connecting the electrode fingers; a first silicon oxide film located on the electrode fingers in an overlap region where the electrode fingers overlap and having a film thickness in a part of edge regions, which correspond to both ends of the overlap region, equal to or less than that in a center region sandwiched between the edge regions; and a second silicon oxide film located on the electrode fingers, containing an element slowing an acoustic velocity in a silicon oxide film when being added to the silicon oxide film, having a concentration of the element greater than that in the first silicon oxide film, and having a film thickness in a part of the edge regions greater than that in the center region.

Acoustic wave resonator, filter, and multiplexer

An acoustic wave device includes: a piezoelectric substrate; and a pair of comb-shaped electrodes that is located on the piezoelectric substrate, includes a metal film, and excites a surface acoustic wave, the metal film being mainly composed of a metal having a melting point equal to or higher than a melting point of Pt, the metal film having a first region in which a crystal grain has a columnar shape and a second region that is located on and/or under the first region in a stacking direction and has less crystallinity than the first region or has an amorphous structure.

The reliability of a semiconductor device which has the semiconductor components which were mounted on the same surface of the same substrate via the bump electrodes with which height differs, and with which package structure differs is improved. Semiconductor componentof WPP structure is mounted on the main surface of the interposer substrate which forms a semiconductor device via a plurality of bump electrodes. Semiconductor componentof CSP structure is mounted on the main surface of an interposer substrate via a plurality of bump electrodes with larger diameter and contiguity pitch than the above-mentioned bump electrode. And under-fillingandmutually different, are filled up between the facing surfaces of this interposer substrate and semiconductor components, and between the facing surfaces of the interposer substrate and semiconductor components, respectively.

Method of manufacturing a semiconductor device

Semiconductor device

A burn-in process for a semiconductor integrated circuit device includes a first process of positioning bump electrodes of the semiconductor integrated circuit device with respect to pads of a socket having detachment mechanisms, a second process of pressing the bump electrodes against the pads by weighting the semiconductor integrated circuit device, and a third process of detaching the bump electrodes from the pads by exerting force on the semiconductor integrated circuit device in a direction opposite to a weighting direction of the second process. Automatic insertion and detachment of a semiconductor integrated circuit chip in a burn-in test is facilitated by detaching the bump electrodes from the pads by pushing up the semiconductor integrated circuit device.

Method for manufactuing a semiconductor integrated circuit device

In a semiconductor device adapted to be mounted on a board and to be electrically connected to the board, comprising, at least two semiconductor electric chips, and a substrate on which the semiconductor electric chips are mounted and to which the semiconductor electric chips are electrically connected, in such a manner that the semiconductor electric chips are mounted on and electrically connected to the board through the substrate, according to the present invention, a thickness of each of the semiconductor electric chips in a direction in which the each of the semiconductor electric chips and the substrate are stacked is smaller than a thickness of the substrate in the direction.

In a multi-chip-module type semiconductor device, first and second semiconductor elements, a main component of each of the semiconductor elements being semiconductor material to form a semiconductor electric circuit in each of the semiconductor elements, are mounted on and electrically connected to a substrate adapted to be mounted onto a mother board and to be electrically connected to the mother board so that the each of the semiconductor elements is electrically connected to the mother board through the substrate.

Multi-chip semiconductor device with specific chip arrangement

An electronic device comprising a semiconductor chip which is fixed to the mounting face of a wiring board through an adhesive and in which external terminals are electrically connected with electrode pads of the wiring board through bump electrodes. Recesses are formed in the electrode pads, and in the recesses the electrode pads and the bump electrodes are connected. The electrode pads are formed over the surface of a soft layer, and the recesses are formed by elastic deformation of the electrode pads and the soft layer.

Process for mounting electronic device and semiconductor device

An electronic device comprising: a semiconductor chip having plural electrode pads on one main surface thereof; a wiring board having plural connection parts; and plural salient electrodes disposed respectively between the electrode pads of the semiconductor chip and the connection parts of the wiring board to provide electrical connections between the two, the salient electrodes being arranged in an array not providing balance of the semiconductor chip with respect to one main surface of the wiring board, the plural connection parts of the wiring board being arranged at a deeper position than one main surface of the wiring board in a depth direction from the one main surface.

Growing community of inventors

Tokyo, Japan

Satoshi Imasu