Nec Lcd Technologies, Ltd.

Nec Corporation

Satoshi Ihida

Michiaki Sakamoto

Hiroaki Tanaka

Shigeru Kimura

Takasuke Hayase

Masaki Shinohara

Tae Yoshikawa

Hidenori Ikeno

Shinichi Nakata

Hiroshi Kanou

Wakahiko Kaneko

Hirotaka Yamaguchi

Shouichi Kuroha

Kazurou Saeki

Kenji Morio

Hiroyuki Uchida

Takahiko Watanabe

Kazushige Takechi

Tsutomu Hamada

Akitoshi Maeda

Shusaku Kido

Hirofumi Ihara

Satoshi Doi

Kyounei Yasuda

Toshihiko Harano

Manabu Oyama

Hisanobu Shimodouzono

Shinichi Nishida

Takahisa Hannuki

Tae Miyahara

Yoshikazu Hatazawa

Jukoh Funaki

Ryuji Takahashi

Satoshi Miura

A method for manufacturing a transflective type LCD having a first substrate provided thereon with a plurality of scanning lines and a plurality of signal lines which are substantially perpendicular to each other and a switching element arranged near each of intersections between said scanning lines and said signal lines, includes forming a reflection region having a reflection electrode film and a transmission region having a transparent electrode film in each pixel surrounded by said scanning lines and said signal lines, a liquid crystal being sandwiched at a gap between said first substrate and a second substrate which is arranged opposite to said first substrate, and forming an organic film having irregularities thereon below said reflection electrode film and said transparent electrode film to substantially the same film thickness.

Transflective type LCD and method for manufacturing the same

In a transflective type LCD provided with a transparent region and a reflection region in each pixel, when an irregular filmis formed on an active matrix substrateto form irregularities of a reflection electrode film, the irregular filmis specifically formed to almost the same film thickness in both the transparent region and the reflection region to provide substantially the same inter-substrate gap in these two regions so that they may have almost the same V-T characteristics and also the reflection electrode filmmade of Al/Mo is formed so as to overlap with a transmission electrode filmmade of ITO all around an outer periphery of the transmission electrode filmby a width of at least 2 &#x3bc;m, thus suppressing electric erosion from occurring between the ITO and Al substances at the edge of the transmission electrode film

In a semi-transmission type liquid crystal display and a method for fabricating the same, a reflective electrode such as aluminum layer and a transparent electrode such as ITO film are used to form a pixel electrode that is provided on an organic film having an uneven surface. In order to effectively restrict the battery effect between a reflective electrode and a transparent electrode, a surface of the organic film is put in a plasma-processing and then is washed by a washing liquid. Thereafter, the transparent electrode is formed and then the reflective electrode such as a double layer electrode of the aluminum layer and the molybdenum layer are formed.

Method of fabricating a semi-transmission LCD by plasma processing and washing organic film, and LCD fabricated thereby

An active-matrix addressing LCD device that suppresses effectively the off leakage current induced by the charge-up of the spacers placed over the TFTs. The device comprises (a) a first substrate having switching elements; (b) a second substrate coupled with the first substrate in such a way as to form a gap with spacers between the first and second substrates; the spacers being distributed in the gap; (c) a liquid crystal confined in the gap; and (d) protrusions formed in overlapping areas with the switching elements; each of the protrusions being protruded in a direction that narrows the gap. The spacers distributed in the gap are likely to be shifted away from the overlapping areas due to the protrusions.

Active-matrix addressing liquid-crystal display device and method of fabricating same

The present invention provides a liquid crystal display apparatus of a lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode/drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate, wherein the semiconductor layer has a width in the gate length direction identical to the gate length.

Liquid crystal display apparatus of a lateral direction electric field drive type

An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode.

Active matrix substrate and manufacturing method therefor

An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and namorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the namorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Active matrix substrate plate and manufacturing method therefor

A method for fabricating an active matrix LCD panel for use in an active matrix LCD device includes the step of forming a passivation layer acting as a channel protection layer for protecting an amorphous silicon active layer, thereby reducing the number of photolithographic steps. A transparent conductive film is used for forming a gate electrode and a pixel electrode before formation of an amorphous silicon film for the TFTs.

Active matrix LCD panel

A method of fabricating a thin film transistor, includes the steps of (a) forming a gate electrode on an electrically insulating substrate, (b) forming a gate insulating film on the electrically insulating substrate, covering the gate electrode therewith, (c) forming a semiconductor layer on the gate insulating film above the gate electrode, (d) forming source and drain electrodes both making electrical contact with the semiconductor layer, (e) patterning the semiconductor layer into a channel, (f) applying first plasma to the semiconductor layer through the use of a first gas, and (g) applying second plasma to the semiconductor layer through the use of a second gas, and (h) forming an electrically insulating film covering the semiconductor layer therewith.

Thin film transistor and method of fabricating the same

An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer ( of FIG. ) and a TFF area. A drain electrode layer ( of FIG. ) is formed by a first passivation film ( of FIG. ) via a first passivation film ( of FIG. ) formed as an upper layer. In a second passivation film ( of FIG. ) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO ( of FIG. ) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.

An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step , the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step , the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step , the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n amorphous silicon layer of the channel gap is removed by etching. In step , the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Manufacturing method of active matrix substrate plate and manufacturing method therefor

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Tokyo, Japan

Satoshi Ihida