Sony Corporation

Cv Research Corporation

Samsung Electronics Co., Ltd.

Satoshi Horiuchi

Kiwamu Adachi

Tetsuya Yukimoto

Disclosed is an imaging apparatus with a flicker detector that restrains an increased calculation amount and image quality degradation. The apparatus includes a frame rate controller for setting a frame rate of an acquired image to a first frame rate or different second frame rate, a luminance calculator for calculating a first luminance difference between two images of a first group continuously acquired at the first frame rate and a second luminance difference between two images of a second group continuously acquired at the second frame rate, and a flicker detector for comparing the first and second luminance differences with first and second threshold, respectively, and determining whether flickers of a first frequency and a different second frequency are generated or not.

Imaging apparatus and imaging method

A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.

Capacitor, method of producing the same, semiconductor device, and liquid crystal display device

A semiconductor apparatus is proposed which is provided with a crystalline dielectric film having a perovskite structure, between electrodes. The semiconductor apparatus includes at least a discontinuous interface through which crystallinity becomes discontinuous, in a columnar crystal portion of the crystalline dielectric film.

Semiconductor apparatus with a crystalline dielectric film and method of manufacturing said semiconductor apparatus

A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cmare carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.

Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device

A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film, and a film treatment process for improving the film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is maintained by a high-density plasma radiation treatment based upon ion and radical reactions, and which contains at least oxygen at an ion current density higher than 5 mA/cmare carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film, which is excellent in film quality, can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film, which is excellent in film quality, can be deposited by a low-temperature treatment and a highly-reliable capacitance element and semiconductor device can be manufactured.

Growing community of inventors

Kanagawa, Japan

Satoshi Horiuchi