Kabushiki Kaisha Toshiba

Satoshi Hongo

Kazumasa Tanida

Hideo Numata

Naoko Yamaguchi

Kenji Takahashi

Tsuyoshi Matsumura

Takashi Shirono

Chiaki Takubo

Masahiro Sekiguchi

Masayuki Dohi

Akihiro Hori

Mari Otsuka

According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

System and method for manufacturing semiconductor device

A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

Semiconductor device and manufacturing method of semiconductor device

According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Manufacturing method of semiconductor device, semiconductor substrate, and camera module

According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.

Semiconductor device manufacturing method, semiconductor device, and camera module

According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.

Growing community of inventors

Oita, Japan

Satoshi Hongo