Kobe Steel, Ltd.

Satoshi Hirota

Koichiro Akari

Rainer Cremer

Kenji Yamamoto

Hiroyuki Mori

Yoshio Fuwa

Shinichi Tanifuji

Hirotaka Ito

Kenji Shimoda

Yoshinori Kurokawa

Keiji Hayashi

Takatoshi Shinyoshi

Munehisa Matsui

Homare Nomura

Naoyuki Goto

Tetsuya Takahashi

Satoshi Jinno

Provided is a hot filament CVD device capable of easily attaching, detaching, and replacing a filament. The hot filament CVD device includes a chamber, a base material support that supports multiple base materials, filament cartridges, and paired holding parts. The filament cartridges each include multiple filaments (), a first frame, a second frame, and paired connecting members. The paired holding parts guide each of the filament cartridges when it is inserted into the chamber, and hold the filament cartridges in the chamber so that the filament cartridges face the multiple base materials.

Hot filament CVD device

Provided is a film formation method that includes: an etching step of etching the surface of the substrate by bringing inert gas ions into collision with the surface of the substrate, the inert gas ions generated in a chamber accommodating the substrate; an implantation step of bringing inert gas ions into collision with metal particles deposited on the surface of the substrate to thereby hit the metal particles into the surface of the substrate while bringing the inert gas ions into collision with a metal target to thereby cause the metal particles to sputter out of the metal target and depositing the metal particles on the surface of the substrate etched in the etching step; and a film formation step of forming the film on the surface of the substrate into which the metal particles have been hit in the implantation step.

Film formation method

Provided is an arc evaporation source capable of stably retaining an arc spot on the front end surface of a target and apparatus downsizing. An arc evaporation source includes a target to be melted and vaporized from its front end surface by arc discharge and at least one magnet disposed apart from a side surface of the target radially thereof. The magnet is disposed to form a magnetic field satisfying conditions a) and b) below, on the side surface, in a region of up to 10 mm from the front end surface axially of the target: a) an angle which magnetic lines of force forms with the side surface of the target is 45 degrees or less; and b) a component of the strength of the magnetic lines of force along the axial direction of the target is 200 G or more.

Arc evaporation source

In an ion bombardment apparatus of the present invention, a heating type thermal electron emission electrode formed by a filament is placed on one inner surface of a vacuum chamber, an anode for receiving a thermal electron from the thermal electron emission electrode is placed on another inner surface of the vacuum chamber, and a base material is placed between the thermal electron emission electrode and the anode. Further, the ion bombardment apparatus has a discharge power supply for generating a glow discharge upon application of a potential difference between the thermal electron emission electrode and the anode, a heating power supply for heating the thermal electron emission electrode so as to emit the thermal electron, and a bias power supply for applying negative pulse-shaped bias potential with respect to the vacuum chamber to the base material.

Ion bombardment apparatus and method for cleaning of surface of base material using the same

A film deposition device including a DMS target and a film-deposition power source, being capable of pre-sputtering the target by use of the film-deposition power source. The film deposition device includes: a film deposition chamber; first and second cathodes each having a target and disposed next to each other wherein surfaces of the target face a substrate; a magnetic-field formation unit forming a magnetic field in vicinity of the target surfaces; a film-deposition power source connected to both of the cathodes; and a shutter. The shutter makes an opening-closing action between a close portion at which the shutter is interposed between the substrate and the target surfaces of both cathodes to block the target surfaces collectively from the substrate and an open position to allow film deposition on the substrate through opening the space between the target surfaces and the substrate.

Film deposition device

A sliding member includes: a substrate which has a sliding surface sliding under the presence of lubricating oil; and a film which is fixed to at least a part of the sliding surface. The film contains carbon (C), titanium (Ti), and boron (B), is obtained by repeatedly and alternately layering a first layer containing amorphous carbon as a principal component and a second layer containing C and Ti as principal components, and has hardness of 18 GPa or more.

Sliding member

Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material.

Growing community of inventors

Takasago, Japan

Satoshi Hirota