Canon Kabushiki Kaisha

Satoshi Hirayama

Yasuhiro Sekine

Mariko Furuta

Atsushi Kanome

Kousei Uehira

A distance between a first accumulation region of a first pixel and a first isolation region is larger than a distance between the first accumulation region and a second isolation region, and a distance between a second accumulation region of a second pixel and a third isolation region is larger than a distance between the second accumulation region and a fourth isolation region.

Image sensing system

A solid-state image sensor having a pixel region and a peripheral circuit region, includes wiring lines arranged in the pixel region and the peripheral circuit region, dummy patterns arranged in the peripheral circuit region, and a planarizing layer arranged on the wiring lines and containing a resin. The wiring lines in the peripheral circuit region include a plurality of electrically conductive patterns. The dummy patterns are arranged between the plurality of electrically conductive patterns. The dummy patterns are electrically insulated from the wiring lines.

Solid-state image sensor, method of manufacturing the same, and camera with dummy patterns

A photomask for exposing a region on a substrate, with a mask pattern, including a first line pattern, a second line pattern, a first connection pattern for a peripheral portion of the region and a second connection pattern for the peripheral portion, wherein the first connection pattern is wider than the first line pattern and the second connection pattern is wider than the second line pattern, a distance from a virtual line between the first line pattern and the second line pattern to a center line of the first connection pattern is larger than a distance from the virtual line to a center line of the first line pattern and a distance from the virtual line to a center line of the second connection pattern is larger than a distance from the virtual line to a center line of the second line pattern.

Photomask and semiconductor apparatus manufacturing method

A photoresist pattern forming method, comprising a first step of forming on an underlayer a photoresist film which includes a convex portion and a concave portion having a thickness thinner than a thickness of the convex portion, and a second step of processing the photoresist film to form, in a portion which has been the convex portion, an opening having a width narrower than a width of the convex portion, wherein in the second step, the convex portion of the photoresist film is at least partially exposed, and the photoresist film is then developed, and exposure light is condensed by the convex portion in exposing the photoresist film.

Photoresist pattern forming method, and microlens array forming method

A solid-state image pickup device includes a photoelectric conversion portion for generating signal electric charges in accordance with an amount of incident light, a plurality of color filters, and a flattening layer formed on the plurality of color filters. A thickness of a projection or a recess on a surface of the flattening layer, provided on a region where color filters are adjacent to each other, is equal to or less than 0.2 &#x3bc;m.

Growing community of inventors

Yokohama, Japan

Satoshi Hirayama