Mitsubishi Denki Kabushiki Kaisha

Satoshi Hirakawa

Shinobu Takahama

Akinobu Tamaki

Haruo Takao

Hitoshi Yamano

Teruki Hyougatani

A semiconductor device including a plurality of grooves (21) formed on a top surface of a heat sink (51). A sealing resin (2) fills a portion between a lead frame (5) provided facing the top surface and the heat sink (51). The grooves (21) are formed on both sides of a center region (22) extending so as to divide the top surface in two. A power semiconductor element (11) is disposed above the center region (22) and a controlling semiconductor element (16) controlling the power semiconductor element (11) is disposed above the region where the grooves (21) are formed. The above construction suppresses thermal resistance interposed in a path through which heat loss in the power semiconductor element (11) is radiated to the heat sink (51) and improves heat radiating efficiency while maintaining close contact between the sealing resin (2) and the heat sink (51).

Semiconductor device

It is an object to increase a breakdown voltage of a lead frame. A primary sealing resin (41) seals the upper main surface of a lead frame (3) and elements mounted thereon. A secondary sealing resin (21) coupling the lead frame (3) and a heat sink (51) passes through gaps of the lead frame (3) having pattern configuration to project on the upper main surface side of the lead frame (3). The primary sealing resin (41) is in close contact with the projections (62). The projections (62) enlarge the creeping distance along the interface between the primary sealing resin (41) and the secondary sealing resin (21) between parts of the lead frame (3) adjacent with gaps therebetween, so that the breakdown voltage between those parts is increased.

Semiconductor device with first and second sealing resins

There is disclosed a semiconductor device wherein electrode terminals (2), elements (6) and wires (7) are disposed on a base plate (5) of a case (4) filled with only epoxy resin (1). The epoxy resin (1) contains impurities such as halogen and alkaline metallic salts in an amount of not more than 5 ppm and has a linear expansion coefficient of 5.times.10.sup.-6 to 25.times.10.sup.-6 when hardened. The semiconductor device provides for direct sealing of the components, whereby its size and cost are reduced.

Semiconductor device and resin for sealing a semiconductor device

A semiconductor device where electrode terminals (2), elements (6) and wires (7) are disposed on a base plate (5) of a case (4) filled with only epoxy resin (1). The epoxy resin (1) contains impurities such as halogen and alkaline metallic salts in an amount of not more than 5 ppm and has a linear expansion coefficient of 5.times.10.sup.-6 to 25.times.10.sup.-6 when hardened. The semiconductor device provides for direct sealing of the components, its size and cost are therefore reduced.

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Fukuoka, Japan

Satoshi Hirakawa