Sekisui Chemical Co., Ltd.

Disco Corporation

Satoshi Hayashi

Koichi Yajima

Masateru Fukuoka

Masahiko Kitamura

Munehiro Hatai

Shigeru Danjo

Yasuhiko Oyama

An object of the present invention is to provide a method for producing polyamide acid particles which is used as a raw material for polyimide particles with a small average particle diameter having high heat resistance. Other objects of the present invention are to provide a method for producing polyimide particles using the method for producing polyamide acid particles, and polyimide particles produced by the method for producing polyimide particles. Yet another object of the present invention is to provide a bonding material for an electronic component, which has a low linear expansion coefficient and a low elastic modulus after being cured in the temperature range equal to or less than the glass transition temperature, so that a joined body with high reliability can be produced. The present invention is a method for producing polyamide acid particles having a step of preparing a solution having a diamine compound dissolved, and a step of precipitating polyamide acid particles by adding a tetracarboxylic anhydride in a non-solution state to the solution having a diamine compound dissolved while applying a physical impact thereto.

Production method for polyamide acid particles, production method for polyimide particles, polyimide particles and bonding material for electronic component

A semiconductor wafer (W) where circuits are formed in the area divided by streets is split into semiconductor chips having individual circuits. By interposing an adhesive sheet, whose adhesive force is lowered by stimulation, between the semiconductor wafer (W) and the support plate (), the front side of the semiconductor wafer (W) is adhered to the support plate (), thereby exposing the rear face () of the semiconductor wafer (W). The rear face () of the semiconductor wafer (W) with the support plate () is ground. After the grinding is finished, the semiconductor wafer (W) held with the rear face () up is diced into semiconductor chips (C). The adhesive sheet is given stimulus to lower the adhesive force and the semiconductor chips (C) are removed from the support plate (). The semiconductor wafer and semiconductor chips are always supported by the support plate, avoiding damage and deformation.

Method for manufacturing semiconductor chip

It is an object of the invention to provide a method for manufacturing an IC chip wherein a wafer is prevented from being damaged and the ease of handling thereof is improved so that the wafer can be appropriately processed into IC chips, even if a thickness of the wafer is extremely reduced to approximately 50 &#x3bc;m. The invention provides a method for manufacturing an IC chip comprising, at least: the step of securing a wafer to a support plate via a support tape having a surface layer comprising an adhesive (A) containing a gas generating agent for generating a gas due to stimulation and a surface layer comprising an adhesive (B); the step of polishing said wafer with securing said wafer to said support plate via said support tape; the step of adhering a dicing tape to said polished wafer; the step of providing said stimulation to said adhesive (A) layer; the step of removing said support tape from said wafer; and the step of dicing said wafer, which comprises adhering said surface layer comprising adhesive (A) to said wafer and adhering said surface layer comprising adhesive (B) to said support plate in the step of securing said wafer to said support plate via said support tape, providing said stimulation while uniformly sucking under reduced pressure the entirety of said wafer from the dicing tape side thereof, and then removing said support tape from said wafer in the step of providing stimulation to said adhesive (A) layer and in the step of removing said support tape from said wafer.

IC chip manufacturing method

Growing community of inventors

Osaka, Japan

Satoshi Hayashi