Sumitomo Electric Industries, Limited

Toyohashi University of Technology

Kyoto University

National University Corporation Toyohashi University of Technology

Satoshi Hatsukawa

Kazuhiro Fujikawa

Kenichi Hirotsu

Shin Harada

Takashi Hoshino

Takashi Ohira

Nobuo Shiga

Tsunenobu Kimoto

Hiroyuki Matsunami

Takashi Tsuno

Kazuyuki Wada

Tuya Wuren

Kazushi Sawada

Hideaki Nakahata

Hirotaka Oomori

Rui Mikami

Toshikazu Shibata

Kyohei Yamada

Seiji Yamamoto

Takashi Hikihara

Daiya Egashira

Kazuya Ishioka

Takefumi Shimoguchi

Kotaro Tanimura

Mitsutoshi Nakata

Tsuguhiro Takuno

A photovoltaic apparatus includes: a concentrator photovoltaic panel; a driving device configured to change an attitude of the photovoltaic panel; a current detection unit configured to detect an output current of the photovoltaic panel; and a control unit configured to cause the driving device to perform a sun-tracking shift operation when it is determined based on a detection result of the current detection unit that the photovoltaic panel is generating no power during tracking of the sun.

Photovoltaic apparatus and photovoltaic apparatus control method

A semiconductor module includes a base member including a circuit board on which a positive electrode pad and a negative electrode pad are provided and on which a semiconductor device is mounted to be electrically coupled to the positive electrode pad and the negative electrode pad, a housing that is attached to the base member so as to surround the positive electrode pad and the negative electrode pad, the housing being formed in a frame shape, a first electrode plate that is electrically coupled to the positive electrode pad, the first electrode plate having a flat plate portion, and a second electrode plate that is electrically coupled to the negative electrode pad, the second electrode plate having a flat plate portion. The flat plate portion of the first electrode plate and the flat plate portion of the second electrode plate are arranged in a parallel-plate configuration within the housing.

Semiconductor module

A front stage circuit of a transformer includes a switch series unit, capacitors, and a ground electrical path. The switch series unit, connected in parallel to a power supply, includes odd-numbered/even-numbered switches configured to be alternately turned ON. Assuming that mutual connection points of the switches and points at both ends of the switch series unit are m nodes in total, and one of the points at the both ends is a ground node, the capacitors are provided on at least one of a first electrical path that combines odd nodes and leads them to a first output port, and a second electrical path that combines even nodes and leads them to a second output port, and the capacitors are present to correspond to (m&#x2212;1) nodes excluding the ground node. The ground electrical path connects the ground node directly to the first output port without an interposed capacitor.

Transformer without magnetic coupling, electromagnetic induction or mutual inductance

A power inverter circuitis a bridge power inverter circuit comprising first and second switching elementssequentially connected in series between input terminals on higher and lower voltage sides and third and fourth switching elementssequentially connected in series between the input terminals on the higher and lower voltage sides and alternately turning on a set of the first and fourth switching elementsand a set of the second and third switching elementsso as to convert a DC power fed between the input terminals on the higher and lower voltage sides into an AC power. One of the sets of the first and third switching elementsand the second and fourth switching elementsis subjected to switching control at a frequency higher than that of the other.

Power inverter circuit having switching elements

To realize a transmission function of power line communication by a further simplified and cost-effective circuit configuration, in a PLC modem installed in an electric appliance such as a household electrical appliance. A semiconductor switching element that is present on an electric circuit connected to a power line is driven by a modulator unit. The modulator unit controls ON/OFF operations of the semiconductor switching element, to thereby cause a communication signal of a modulated rectangular wave to be output to the power line for a prescribed period.

Power line communication device, power supply circuit with communication function, electric appliance, and control and monitoring system

To provide a semiconductor device which allows a plurality of semiconductor chips to let a current flow uniformly therethrough and a method of manufacturing the same. The semiconductor device in accordance with one embodiment comprises a plurality of first semiconductor chips and a circuit board, mounted with the plurality of the first semiconductor chips, having first and second wiring conductors electrically connected to the plurality of first semiconductor chips. The plurality of first semiconductor chips are connected in parallel together with the first and second wiring conductors so as to construct a first parallel circuit. The plurality of first semiconductor chips are arranged on the circuit board according to an on-resistance of the plurality of first semiconductor chips so that a uniform current flows through the plurality of first semiconductor chips.

Semiconductor device and method of manufacturing semiconductor device

A switching circuitcomprises a connection circuit cascade-connecting control terminals for controlling switching of n number of transistors M-Mn via n&#x2212;1 number of coils Lrespectively (n is an integer equal to or more than 2; and coils Lrespectively connected between one end of each of the transistors M-Mn and other end of a coil L, one end of the coil Lbeing electrically connected to a DC power source. The transistors M-Mn is sequentially switched with PWM signals inputted to an input terminal of the connection circuit. The switching circuitfurther comprises a transistor Minserted at the one end or the other end of the coil Lin cascade-connection.

Switching circuit and envelope signal amplifier

A switching circuit according to one embodiment has: N switching elements; a connection circuit including N&#x2212;1 first inductance elements that are connected in series; a second inductance element; and N third inductance elements. Control terminals of the N switching elements are connected to ends of the connection circuit and connection contacts, respectively. One end of the second inductance element is connected to a power supply. The N third inductance elements electrically connects one ends of the N switching elements and the other end of the second inductance element with each other, respectively.

A method of manufacturing a semiconductor device comprises the steps of forming a film on a main face of a semiconductor substrate having a plurality of device forming regions for forming semiconductor devices, the film having a coefficient of thermal expansion different from that of the semiconductor substrate and including a cutout on a region between the plurality of device forming regions; forming the semiconductor devices in the respective device forming regions by using the film; and dividing the semiconductor substrate into the respective device forming regions.

Method of manufacturing semiconductor device

A switching circuit according to one embodiment includes: a switching element that has a first terminal and a second terminal, and is driven by a pulse signal to switch a conduction state between the first and second terminals; a power source section that supplies a voltage to the first terminal; a load circuit that is connected in parallel with the power source section; a passive circuit section that is connected between a connection point between the power source section and the load circuit, and the first terminal, and suppresses a current flowing from the connection point to the switching element at a frequency N times (N is an integer of 1 or more) as high as a clock frequency of the pulse signal; and a resonant circuit section that is connected between the passive circuit section and the connection point, and resonates at the frequency of N times.

Switching circuit

A vertical JFETaccording to the present invention has an ntype drain semiconductor portion, an n-type drift semiconductor portion, a ptype gate semiconductor portion, an n-type channel semiconductor portion, an ntype source semiconductor portion, and a ptype gate semiconductor portion. The n-type drift semiconductor portionis placed on a principal surface of the ntype drain semiconductor portionand has first to fourth regionstoextending in a direction intersecting with the principal surface. The ptype gate semiconductor portionis placed on the first to third regionstoof the n-type drift semiconductor portion. The n-type channel semiconductor portionis placed along the ptype gate semiconductor portionand is electrically connected to the fourth regionof the n-type drift semiconductor portion

Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

Growing community of inventors

Osaka, Japan

Satoshi Hatsukawa