Renesas Electronics Corporation

Sony Corporation

Jfe Chemical Corporation

Tdk Corporation

Mitsumi Electric Company Ltd.

Fujikoki Corporation

Satoshi Goto

Masao Kondo

Yukiko Nakamura

Hirofumi Yoshida

Satoshi Sakurai

Naoyoshi Yoshida

Yusuke Imai

Masayuki Uchida

Takeshi Yanata

Takeshi Oyanagi

Shin Kagaya

Daiki Suzuki

Tomoyuki Miyake

Toru Fujioka

Isao Suzuki

Toru Suzuki

Masatoshi Morikawa

Daisuke Kondo

Izushi Kobayashi

Kazuaki Hori

Kenichi Mochizuki

Fumiyasu Suzuki

Kaname Ueda

Keiichi Taguchi

Norio Nishida

Hiroshi Masaki

Kiyoshi Tada

Masaharu Yanaga

Yoshihiro Fujimoto

Junji Takiguchi

Takahiro Akaike

Keiichi Yanagiya

In a flow path switching valve, when a valve rod is shifted toward a first back pressure chamber, a first valve chamber is separated from the first back pressure chamber by a first valve element, and a second valve chamber is separated from an intermediate chamber by a second valve element. When the valve rod is shifted toward a second back pressure chamber, the first valve chamber is separated from the intermediate chamber by the first valve element, and the second valve chamber is separated from the second back pressure chamber by the second valve element. The valve rod has a pressure equalizing path through which the first back pressure chamber and the second back pressure chamber are connected.

Flow path switching valve

The plug shell of the electrical connector includes the accommodation portion for accommodating the contact pin and the housing that holds the contact pin, the insertion port for inserting the contact pin and the housing into the accommodation portion, the lid member for closing the insertion port, and the hold mechanism for holding the lid member. The hold mechanism includes the pedestal, on which the lid member is placed, and the pair of hold pieces, which hold the lid member on the pedestal by pressing. The pair of hold pieces press the end portions of the lid member toward the pedestal, so that thereby a stress that urges the end portions to become distant from the pedestal is generated in the lid member.

Electrical connector and method for mounting electrical connector

A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

Method for producing chip varistor and chip varistor

A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

Multilayer chip varistor

An attenuating antenna switch may be used to suppress increase in the scale and power consumption of an RFIC. The antenna switch has a first terminal, a second terminal, and an antenna terminal coupled to the first and second terminals and configured to be connected to an antenna. The first switch switches between a first state in which a high frequency signal is propagated between the first terminal and the antenna terminal, and a second state in which the high frequency signal is interrupted. A second switch switches between the first and second states between the second terminal and the antenna terminal. The first and second switches are controlled in a mutually exclusive manner such that only one of the two switches can be in the first state at any given time. When in the first state, each switch adjusts an attenuation amount of the high frequency signal.

Attenuating antenna switch and communication device

In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.

Semiconductor device

Disclosed is a MnZnCo-based ferrite consisting of base constituents, accessory constituents, and inevitable impurities, which MnZnCo-based ferrite is characterized by adding silicon oxide (SiO2 conversion): 50-400 mass ppm and calcium oxide (CaO conversion): 1000-4000 mass ppm as secondary constituents to base constituents consisting of iron oxide (Fe2O3 conversion): 51.0-53.0 mol %, zinc oxide (ZnO conversion): greater than 12.0 mol % and less than 18.0 mol %, cobalt oxide (CoO conversion): 0.04-0.60 mol %, and manganese oxide (MnO conversion): remainder, and keeping phosphorus, boron, sulfur, and chlorine of the inevitable impurities to phosphorous: less than 3 mass ppm, boron: less than 3 mass ppm, sulfur: less than 5 mass ppm, and chlorine: less than 10 mass ppm. This MnZnCo-based ferrite has the superior characteristics of always having incremental permeability [mu]? of 2000 or greater across a wide temperature range of &#x2212;40 DEG C. to 85 DEG C. when a 33 A/m direct current magnetic field is applied, even in cases when formed into a small core with outside diameter of approximately 2-6 mm.

Mn-Zn-co ferrite

A Mn&#x2014;Zn&#x2014;Co ferrite core includes a basic component, sub-components, and unavoidable impurities. As the sub-components, silicon oxide (in terms of SiO): 50-400 mass ppm and calcium oxide (in terms of CaO): 1000-4000 mass ppm are added to the basic component consisting of iron oxide (in terms of FeO): 51.0-53.0 mol %, zinc oxide (in terms of ZnO): more than 12.0 mol % and 18.0 mol % or less, cobalt oxide (in terms of CoO): 0.04-0.60 mol %, and manganese oxide (in terms of MnO): balance; Phosphorus, boron, sulfur, and chlorine in the unavoidable impurities are reduced as follows, phosphorus: less than 3 mass ppm, boron: less than 3 mass ppm, sulfur: less than 5 mass ppm, and chlorine: less than 10 mass ppm; and a ratio of a measured specific surface of the Mn&#x2014;Zn&#x2014;Co ferrite core to an ideal specific surface of the Mn&#x2014;Zn&#x2014;Co ferrite core satisfies: Measured specific surface/ideal specific surface &#x3c;1500.

Mn-Zn-Co ferrite core and method for producing the same

Disclosed is a MnZn ferrite core comprising basic components, subcomponents and unavoidable impurities. To the basic components comprising: iron oxide (as FeO): 51.0-54.5 mol %, zinc oxide (as ZnO): 8.0-12.0 mol % and manganese oxide (as MnO): remainder, are added silicon oxide (as SiO): 50-400 mass ppm and calcium oxide (as CaO): 50-4000 ppm as subcomponents and in the unavoidable impurities, phosphorous, boron, sulfur and chlorine are respectively kept to: less than 3 mass ppm, less than 3 mass ppm, less than 5 mass ppm, and less than 10 mass ppm. The ratio of the measure specific surface area to the ideal specific surface area of the MnZn ferrite core satisfies the formula: Measured specific surface area/ideal specific surface area&#x3c;1500.

Mn&#x2014;Zn ferrite core and method for producing the same

A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the same layer as a drain wire coupled to the drain region of an LDMOSFET, which will serve as the amplification part of the semiconductor chip. Due to this, the predetermined drain wire is used as a main line and the directional coupler is configured by a sub-line arranged in parallel to the main line via an insulating film, together with the main line.

Semiconductor chip comprising a directional coupler having a specific main line and sub-line arrangement

A MnZn ferrite having excellent characteristics of an incremental permeability &#x3bc;&#x394; value of 250 or greater in a wide temperature range of 0 to 85&#xb0; C. and an incremental permeability &#x3bc;&#x394; value of 400 or greater at 65&#xb0; C. when an 80 A/m direct current magnetic field is applied is provided. The MnZn ferrite has basic components that comprise: ferric oxide (in terms of FeO): 51.0 to 54.5 mol %, zinc oxide (in terms of ZnO): 8.0 to 12.0 mol %, and manganese oxide (in terms of MnO): the balance, sub components that comprise: silicon oxide (in terms of SiO2): 50 to 400 mass ppm, and calcium oxide (in terms of CaO): 50 to 400 mass ppm, and unavoidable impurities phosphorous, boron, sulfur and chlorine that are restricted to phosphorous: less than 3 mass ppm, boron: less than 3 mass ppm, sulfur: less than 5 mass ppm, and chlorine: less than 10 mass ppm.

MnZn ferrite and a transformer magnetic core

A semiconductor antenna switch has an antenna terminal, a transmission terminal and a reception terminal. The antenna switch is capable of reducing harmonic distortion even though it includes field effect transistors formed over a silicon substrate. A shunt transistor including a plurality of series-connected field effect transistors is connected between he transmission terminal and a common terminal, such as a common terminal, which may be an electrical ground. Off capacitances and/or gate widths of a plurality of the series-connected field effect transistors increase monotonically in the direction from the common terminal to the transmission terminal, or equivalently, decrease monotonically in the direction from the transmission terminal to the common terminal.

Semiconductor antenna switch

In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate. Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.

Growing community of inventors

Tokyo, Japan

Satoshi Goto