Disco Corporation

Satoshi Genda

Hiroshi Morikazu

Yukio Morishige

Noboru Takeda

Toshiyuki Yoshikawa

Nobuyasu Kitahara

Hiroshi Nomura

Masaru Nakamura

Kazuhiro Watanabe

Kenji Furuta

Ryugo Oba

Tsutomu Maeda

Naoki Ohmiya

Koichi Takeyama

Andy Sher

A method of processing a workpiece includes a holding step, a height position detecting step, a modified layer forming step, and a dividing step. The height position detecting step is a step of, after the holding step, applying a measuring laser beam emitted from a height position detecting unit to the workpiece while moving a chuck table that holds the workpiece thereon and the height position detecting unit relatively to each other to detect a height position of the workpiece using a reflected beam from a reverse side of the workpiece. In the height position detecting step, the measuring laser beam is applied clear of areas of the workpiece where columnar conductive electrodes are embedded in streets.

Method of processing workpiece

A wafer processing method includes a wafer unit forming step of supporting a wafer through an adhesive tape to an annular frame to thereby form a wafer unit, a wafer unit holding step of holding the wafer through the adhesive tape on a holding surface of a chuck table under suction, a processing step of applying a laser beam to the wafer held on the chuck table to thereby form a modified layer inside the wafer, an unloading step of unloading the wafer unit from the chuck table, and a dividing step of dividing the wafer along the modified layer as a division start point. The wafer processing method further includes a close contact canceling step of blowing a fluid from the holding surface against the adhesive tape after performing the processing step to thereby cancel the close contact between the adhesive tape and the holding surface.

Wafer processing method

A device fabrication method for fabricating individual devices from a wafer, wherein the back side of each device is covered with an adhesive film for die bonding. The device fabrication method includes a wafer dividing step of dividing the wafer into the individual devices along a plurality of kerfs by using a dicing before grinding process, an adhesive film mounting step of mounting an adhesive film on the back side of the wafer after performing the wafer dividing step, and an adhesive film dividing step of applying a laser beam to the adhesive film along the kerfs after performing the adhesive film mounting step, thereby dividing the adhesive film along the kerfs.

Fabrication method for device having die attach film on the back side thereof

A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the chuck table comprises a body and a workpiece holding member disposed on the top surface of the body, and the workpiece holding member is made of a material which transmits a laser beam having a predetermined wavelength.

Laser beam processing machine

A wafer holding mechanism for holding a wafer affixed to a frame with a tape utilizing a suction force. The wafer holding mechanism includes a suction body, a wafer holder with a holding surface for holding the wafer via the tape, and a suction unit with a suction portion disposed at an outer peripheral edge of the wafer holder. The suction portion transmits a suction force across the holding surface though the outer peripheral edge of the wafer holder such that when the suction portion is covered and sealed by the tape, the wafer holder is held at the suction unit and the wafer is held at the holding surface.

Wafer holding mechanism

Disclosed herein is a laser processing method for a wafer having a plurality of regions defined by streets, with the regions having a plurality of devices formed therein. The method irradiates the wafer with a laser beam along the streets, thereby forming laser processed grooves along the streets. It includes a processed groove formation step of irradiating the wafer while positioning the beam's focus spot on an irradiation surface of the wafer, thereby forming the laser processed grooves; and a processed groove finishing step of irradiating the wafer along the laser processed grooves formed by the processed groove formation step, while positioning the focus spot beyond the bottom of the laser processed grooves, thereby finishing both sides of the laser processed grooves.

Laser processing method for wafer

A method of dividing a wafer having a plurality of micro electro mechanical systems and a plurality of streets for partitioning the micro electro mechanical systems formed on the front surface of a wafer substrate, the method comprising a protective tape affixing step for affixing a protective tape to the front surface of the wafer; a cut groove-forming step for forming a cut groove by cutting the wafer having the protective tape affixed thereto along the streets from the back surface of the wafer substrate, leaving a cutting margin having a predetermined thickness on the front surface side of the wafer substrate; and a cutting step for cutting the cutting margins by applying a laser beam to the cutting margins of the cut grooves formed along the streets.

Wafer dividing method

A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.

A method of dividing a plate-like workpiece having a layer that is made of a different material from that of a substrate and is formed on the front surface of the substrate along predetermined dividing lines, comprising a laser beam application step for applying a laser beam to each dividing line formed on the plate-like workpiece except for a non-processed area in at least one end portion thereof to form grooves deeper than the layer; and a cutting step for cutting the plate-like workpiece along each dividing line by positioning a cutting blade on the side of the non-processed area in the dividing line where the grooves have been formed in the laser beam application step and moving the plate-like workpiece relative to the cutting blade while rotating the cutting blade.

Growing community of inventors

Tokyo, Japan

Satoshi Genda