Sumitomo Electric Industries, Limited

Seiko Epson Corporation

Nec Corporation

Satoshi Fujii

Hideaki Nakahata

Kenjiro Higaki

Shin-ichi Shikata

Akihiro Hachigo

Hiroyuki Kitabayashi

Tomoki Uemura

Shinichi Shikata

Yuichiro Seki

Katsuhiro Itakura

Yutaka Takada

Kentaro Yoshida

Shigekazu Takagi

Kesatoshi Takeuchi

Shin-Ichi Shikata

Yasushi Yamamoto

Takahiro Imai

Keiji Ishibashi

Junichi Suzuki

Yoshihiro Takahashi

Takashi Tsuno

Satoshi Kito

Takeo Funakawa

Norio Imaoka

Shuichi Kawano

Daichi Kawaguchi

Masashi Narita

Natsuhiko Sakairi

Takashi Koiso

Takatoshi Umeda

Noboru Gotou

Toshiaki Saka

A light source device includes an elliptical resonator, an electric discharge lamp that has an electric discharge tube and an electrode connected to the electric discharge tube and is disposed at one of two confocal points of the elliptical resonator, and a power supply antenna that supplies a microwave to the electric discharge lamp and is disposed at the other confocal point.

Light source device having a power supply antenna disposed at one focal point of an elliptical resonator, and projector

A surface acoustic wave element includes: a diamond layer; an alumina nitride layer provided on the diamond layer; a silicon oxide layer provided on the alumina nitride layer; and a pair of electrodes provided between the alumina nitride layer and the silicon oxide layer, the electrodes applying a voltage to the alumina nitride layer. If a thickness of the alumina nitride layer is represented by H, a thickness of the silicon oxide layer is represented by H, a wavelength of a surface acoustic wave is represented by &#x3bb;, x is defined as x=2&#x3c0;H/&#x3bb;, and y is defined as y=2&#x3c0;H/&#x3bb;, (x, y) meets all of the following formulas 1 to 4 below. That is, the formula 1 is y&#x2266;0.750&#xd7;x+0.325; the formula 2 is y&#x2266;&#x2212;0.300&#xd7;x+1.690; the formula 3 is y&#x2267;&#x2212;0.500&#xd7;x+0.950; and the formula 4 is y&#x2267;0.700&#xd7;x&#x2212;0.610.

Surface acoustic wave element

An optical source device includes a solid high frequency oscillating unit that outputs a high frequency signal, a waveguide that receives the high frequency signal output from the solid high frequency oscillating unit and radiates the received high frequency signal as a microwave, and a light emitting unit that emits light by the microwave radiated from the waveguide unit. A container of the waveguide unit has a space surrounded by reflective surfaces that reflect the microwave radiated from the antenna unit so as to collect the microwave. A projector includes this optical source device, an optical modulating unit that modulates a light beam emitted from the light emitting unit of the optical source device according to image information to form an optical image, and a projecting unit that projects the optical image formed by the optical modulating unit.

Light source device and projector including light source device

To provide a projector using a light source device that is rapidly and reliably turned on and can stably obtain a desired amount of light and a method of rapidly and reliably turning on a light source device of a projector. A power control unit adjusts the amplification factor of an amplifying unit for microwaves such that microwave power having a pulse form that is higher than the microwave power radiated to keep an electrodeless lamp emitting light is radiated to turn on the electrodeless lamp. Therefore, a microwave having predetermined power is radiated to the electrodeless lamp at once.

Projector and method of turning on light source device of projector

The invention provides an optical source device and a projector including the optical source device, in which a microwave is used to reduce the size, and increase the life span. The optical source device according to the invention includes a solid high frequency oscillating unit that outputs a high frequency signal, a waveguide that receives the high frequency signal output from the solid high frequency oscillating unit and radiates the received high frequency signal as a microwave, and a light emitting unit that emits light by the microwave radiated from the waveguide unit. A container of the waveguide unit has a space surrounded by reflective surfaces that reflect the microwave radiated from the antenna unit so as to collect the microwave. The projector includes this optical source device, an optical modulating unit that modulates a light beam emitted from the light emitting unit of the optical source device according to image information to form an optical image, and a projecting unit that projects the optical image formed by the optical modulating unit.

A high-frequency heating device including: a solid-state oscillator that generates a microwave; an amplifier that amplifies the microwave generated by the solid-state oscillator; an isolator that is connected to a stage subsequent to the amplifier and blocks a reflected wave directed from an object exposed with the microwave; an antenna that irradiates the microwave toward the object; and a metal cavity that traps therein the microwave irradiated to the object.

High-frequency heating device, semiconductor manufacturing device, and light source device

An acoustic wave device capable of exhibiting good characteristics for a prolonged period of time and a method of manufacturing an acoustic wave device are provided. An acoustic wave device of the invention includes a piezoelectric body layer having piezoelectricity and one surface, a pair of electrodes for, when electrified, inducing acoustic vibration in the piezoelectric body layer, the electrodes arranged on the one surface of the piezoelectric body layer, and a silicon dioxide layer provided in contact with the piezoelectric body layer and/or the electrodes, the silicon dioxide layer composed of silicon dioxide as its major component, wherein the silicon dioxide layer is formed by performing sputtering with a silicon dioxide target in an atmosphere of an oxygen flow rate ratio of 60% or more.

Acoustic wave device and method of manufacturing acoustic wave device

The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies. The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2&#x3c0;&#xb7;H/&#x3bb;) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is &#x3bb;.

Saw device

A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves are formed on the chemically vapor-deposited diamond layer by laser processing using a laser such as a YAG, CO , or excimer laser each having a large output so that the grooves can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves are formed on the substrate by dicing such that the back-side grooves are in alignment with the front-side grooves . (4) The diamond wafer is divided into individual chips by applying mechanical stresses.

Method for separating chips from diamond wafer

A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer ; (b) a ZnO layer , with a thickness of tz, formed on the diamond layer ; (c) interdigital transducers (IDTs) , which excite and receive a SAW, formed on the ZnO layer ; and (d) an SiO layer , with a thickness of ts, formed on the ZnO layer so that the SiO layer can cover the IDTs . The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1&equals;3&middot;2&pgr;&middot;(tz/&lgr;) and kh2&equals;3&middot;2&pgr;&middot;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.

A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.

Diamond substrate for surface acoustic wave device, and surface acoustic wave device

A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.

Surface acoustic wave device utilizing a ZnO layer and a diamond layer

A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1&equals;5&middot;2&pgr;&middot;(tz/&lgr;) and kh2&equals;5&middot;2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.

Surface acoustic wave device

The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.

Growing community of inventors

Itami, Japan

Satoshi Fujii