Jsr Corporation

Satoshi Dei

Kazunori Takanashi

Takashi Mori

Koichi Hasegawa

Hisashi Nakagawa

Hayato Namai

Tatsuya Sakai

Masayuki Motonari

Shin-ya Minegishi

Yoshio Takimoto

Kyoyu Yasuda

Yusuke Anno

Yushi Matsumura

Shunsuke Kurita

Tomoharu Kawazu

Hiroyuki Miyauchi

Nao Okumura

A method for forming a protective film includes directly or indirectly coating only a periphery of a substrate with a composition. The composition includes a compound having an aromatic ring, and a solvent. The solvent includes a first solvent having a normal boiling point of 156° C. or higher and lower than 300° C. A content of the first solvent in the solvent is preferably 20 mass % or more and 100 mass % or less. The first solvent is preferably an ester, an alcohol, an ether, a carbonate, or a combination of two or more of an ester, an alcohol, an ether, and a carbonate.

Method for forming protective film, method for manufacturing patterned substrate, and composition

An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a &#x3b2;-diketone, a &#x3b2;-keto ester, a &#x3b2;-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), Rrepresents an organic group having a valency of n. X represents &#x2014;OH, &#x2014;COOH, &#x2014;NCO or &#x2014;NHR, wherein Rrepresents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.RX)&#x2003;&#x2003;(1)

Inorganic film-forming composition for multilayer resist processes, and pattern-forming method

A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.

Method for forming pattern, and polysiloxane composition

A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

Polysiloxane composition and pattern-forming method

An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.

Insulation pattern-forming method and insulation pattern-forming material

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Tokyo, Japan

Satoshi Dei