Tokyo Electron Limited

Satoshi Biwa

Satoshi Okamura

Hiroaki Inadomi

Gentaro Goshi

Katsuhiro Ookawa

Satoru Tanaka

Jiro Higashijima

Norihiro Ito

Shuichi Nagamine

Yuichi Douki

Hiromi Kiyose

Naofumi Kishita

Terufumi Wakiyama

Yuichiro Kunugimoto

Shinichiro Shimomura

Masataka Gosho

Kouji Fujimura

Yasuo Kiyohara

Kouji Kimoto

Toru Ihara

Tooru Nakamura

Nobuya Yamamoto

Tetsuro Nakahara

Keiichi Yahata

Kohei Yamada

Saya Inoue

A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substrate processing method includes: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along a surface of the substrate. The flowing of the processing fluid includes flowing the processing fluid in a first flow mode and flowing the processing fluid in a second flow mode. Between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid is different, and a switchover between the first flow mode and the second flow mode is performed by the flow control device.

Substrate processing method and substrate processing apparatus

There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

Substrate processing apparatus and control method thereof

A cleaning apparatus of a substrate processing apparatus according to an exemplary embodiment includes a nozzle and a scanner. The nozzle ejects a gas toward in an inner wall surface of a processing chamber in which a substrate is processed. The scanner causes the nozzle to scan along the inner wall surface of the processing chamber in the processing chamber.

Cleaning apparatus and cleaning method of substrate processing apparatus

Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a container body, and a holding member that conveys the substrate from an outside of the container body into the container body and holds the substrate inside the container body during the processing. A substrate support pin supporting a wafer and a cooling plate cooling the holding member are provided outside the container body.

Substrate processing apparatus having cooling member

Provided is a substrate processing apparatus including a processing container configured to receive a substrate on which a dry preventing liquid is filled and perform a supercritical processing on the substrate; a fluid supply line connected to the processing container and configured to supply a processing fluid to the processing container; a fluid discharge line connected to the processing container and configured to discharge the processing fluid in the processing container; and a first circulation line connected to an upstream side and a downstream side of the processing container, and provided independently from the fluid supply line and the fluid discharge line to circulate the processing fluid in the processing container. The first circulation line is provided with a first reservoir tank that receives the processing fluid from the processing container and has a capacity larger than that of the processing container.

Substrate processing apparatus, substrate processing method, and storage medium

Provided is a substrate processing apparatus including a liquid processing unit that performs a liquid processing on a substrate; a drying processing unit that performs a drying processing on the substrate in a wet state; a first conveyance unit that conveys the substrate to the liquid processing unit; a second conveyance unit that conveys the substrate in the wet state from the liquid processing unit to the drying processing unit; and a third conveyance unit that conveys the substrate before the liquid processing in the liquid processing unit and to convey the substrate after the drying processing from the drying processing unit. The first and second conveyance units and the drying processing unit are disposed on a side that faces the third conveyance unit, and the liquid processing unit is disposed on a side that faces the first and second conveyance units and is opposite to the third conveyance unit.

Substrate processing apparatus

Disclosed is a substrate processing apparatus including: a container body configured to accommodate a substrate and perform a processing on the substrate using a high-pressure processing fluid; a conveyance port configured to carry the substrate into and out of the container body; an opening formed in the container body at a position different from the conveyance port; and a cover member configured to close the opening.

A substrate processing system includes: a holding plate provided to be rotatable around a vertical axis; a substrate holding member provided on the holding plate to hold a substrate; a rotary drive unit that rotates the substrate in a predetermined direction; and a processing fluid supply unit that supplies a processing liquid to the substrate. The substrate holding member includes a first side portion provided at a position facing the substrate and a second side portion and a third side portion that are adjacent to the first side portion. The first side portion includes a gripping portion configured to grip an end surface of the substrate. The second side portion forms a pointed end portion with the first side portion, and includes a liquid flow guide portion that guides the processing liquid to a lower side of the substrate after the processing liquid is supplied to the substrate.

Substrate processing system

Disclosed is a liquid processing apparatus capable of increasing the number of arranged substrate retainers without increasing the total exhaust amount of the liquid processing apparatus. A N-number (N is an integer identical to or greater than three) of cup bodies are inhaled and exhausted in total exhaust amount E through a plurality of separate exhaustion passage each having a first damper, and through a common exhaustion passage connected in common downstream of the separate exhaustion passages. The first dampers are configured such that an external air is received from the cup body in a first intake amount of external air Efor one of the cup bodies where a chemical liquid nozzle is placed at a setting location facing a wafer, and an external air is received from each of the other cup bodies in a second intake amount of external air Eless than the first amount Eand the intake amount of external air from both each of the other cup bodies and each of branched passages equals (E&#x2212;E)/(n&#x2212;1).

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Kumamoto, Japan

Satoshi Biwa