Renesas Electronics Corporation

Nec Electronics Corporation

Satoshi Ae

Isao Watanabe

Tetsuro Okuda

Shoutarou Kitamura

Suguru Kato

To improve characteristics of a semiconductor device (semiconductor laser), an active layer waveguide (AWG) comprised of InP is formed over an exposed part of a surface of a substrate having an off angle ranging from 0.5&#xb0; to 1.0&#xb0; in a [1-1-1] direction from a (100) plane to extend in the [0-1-1] direction. A cover layer comprised of p-type InP is formed over the AWG with a V/III ratio of 2000 or more. Thereby, it is possible to obtain excellent multiple quantum wells (MQWs) by reducing a film thickness variation of the AWG. Moreover, the cover layer having side faces where a (0-11) plane almost perpendicular to a substrate surface mainly appears can be formed. A sectional shape of a lamination part of the cover layer and the AWG becomes an approximately rectangular shape. Therefore, an electrification region can be enlarged and it is possible to reduce a resistance of the semiconductor device.

Method for manufacturing semiconductor device and semiconductor device

A buried semiconductor laser exhibiting a reduced dislocation of a contact layer is achieved. A buried semiconductor laser, comprising: an n-type indium phosphide (InP) substrate; an active layer disposed on the n-type InP substrate; block layers provided so as to bilaterally disposed on both sides of the active layer; a clad layer provided so as to cover the active layer and the block layers; and a p-type gallium indium arsenide (InGaAs) contact layer provided on the clad layer, wherein the p-type InGaAs contact layer has a compressive strain.

Growing community of inventors

Kanagawa, Japan

Satoshi Ae