Sony Corporation

Sony Semiconductor Solutions Corporation

Renesas Technology Corp.

Sony Group Corporation

Satoru Wakiyama

Hiroshi Ozaki

Masaki Haneda

Reijiroh Shohji

Yutaka Ooka

Masaki Okamoto

Taizo Takachi

Kazunori Nagahata

Yoshifumi Zaizen

Takuya Nakamura

Toshihiko Hayashi

Kan Shimizu

Naoki Jyo

Masaya Nagata

Yuichi Yamamoto

Naoki Komai

Yasuhito Inagaki

Tadashi Iijima

Yoichi Ootsuka

Kozo Harada

Kentaro Akiyama

Keita Ishikawa

Suguru Saito

Kaori Takimoto

Jun Ogi

Susumu Inoue

Junichiro Fujimagari

Yukio Tagawa

Hirotaka Yoshioka

Masaki Minami

The present disclosure relates to a solid-state image sensor, a manufacturing method, and an electronic device that enable control of a wafer process and a chip size package (CSP) process even with no cover glass. A CIS wafer and a logic wafer including a logic circuit or a memory circuit are stacked and bonded. The CIS wafer and the logic wafer are electrically connected via a through electrode. After formation of a lens on a light receiving surface of the CIS wafer, a wafer support system material is bonded on the lens. An external electrode is formed as an external output, using a TSV formed from a back surface side of the logic wafer that has been made into a thin film. The wafer support system material is then separated from the light receiving surface. The present disclosure can be applied to, for example, a stacked-type back-illuminated solid-state image sensor.

Solid-state imaging element, manufacturing method, and electronic device

The present disclosure relates to a backside illumination type solid-state imaging device, a manufacturing method for a backside illumination type solid-state imaging device, an imaging apparatus, and electronic equipment by which the manufacturing cost can be reduced. A singulated memory circuit and a singulated logic circuit are laid out in a horizontal direction and are embedded by an oxide film and flattened, and then are stacked so as to be contained in a plane direction under a solid-state imaging element. The present disclosure can be applied to an imaging apparatus.

Backside illumination type solid-state imaging device, manufacturing method for backside illumination type solid-state imaging device, imaging apparatus and electronic equipment

A backside-illumination solid-state image pickup apparatus and a backside-illumination solid-state image-pickup-apparatus manufacturing method, an image pickup apparatus, and electronic equipment that are configured to make it possible to reduce manufacturing costs. A diced memory circuit and logic circuit are laid out in a horizontal direction, are embedded and flattened by using an oxide film, and are stacked so as to be enclosed in a plane direction under a solid-state image pickup element. The present disclosure can be applied to an image pickup apparatus.

Backside-illumination solid-state image pickup apparatus, image pickup apparatus, and electronic equipment including embedment members

An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

Semiconductor device and method of manufacturing the same

The present technology relates to a solid-state imaging unit that makes it possible to increase the number of terminals, a method of producing the same, and an electronic apparatus. A solid-state imaging unit includes: an image sensor substrate including a light receiving region in which pixels that each convert incoming light to an electric signal are arranged in a matrix; a solder ball; a glass substrate opposite the image sensor substrate and the solder ball; and a through electrode that couples a wiring line pattern and the solder ball to each other by penetrating a glass adhesive resin interposed between the wiring line pattern and the solder ball. The solder ball is disposed outside the image sensor substrate in a plane direction. The wiring line pattern being formed on the glass substrate. The present disclosure is applicable, for example, to a package and the like including the image sensor substrate.

Solid-state imaging unit, method of producing the same, and electronic apparatus

There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Semiconductor device, manufacturing method for semiconductor device, and electronic device

There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

Semiconductor device and method of manufacturing thereof

The present technology relates to a solid-state imaging unit that makes it possible to increase the number of terminals, a method of producing the same, and an electronic apparatus. A solid-state imaging unit includes: an image sensor substrate including a light receiving region in which pixels that convert incoming light to an electric signal are arranged in a matrix; a solder ball; a glass substrate opposite the image sensor substrate and the solder ball; and a through electrode that couples a wiring line pattern and the solder ball to each other by penetrating a glass adhesive resin interposed between the wiring line pattern and the solder ball. The solder ball is disposed outside the image sensor substrate in a plane direction. The wiring line pattern being formed on the glass substrate. The present disclosure is applicable, for example, to a package and the like including the image sensor substrate.

There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

A semiconductor unit includes: a first device substrate including a first semiconductor substrate and a first wiring layer, in which the first wiring layer is provided on one surface side of the first semiconductor substrate; a second device substrate including a second semiconductor substrate and a second wiring layer, in which the second device substrate is bonded to the first device substrate, and the second wiring layer is provided on one surface side of the second semiconductor substrate; a through-electrode penetrating the first device substrate and a part or all of the second device substrate, and electrically connecting the first wiring layer and the second wiring layer to each other; and an insulating layer provided in opposition to the through-electrode, and penetrating one of the first semiconductor substrate and the second semiconductor substrate.

Semiconductor unit, method of manufacturing the semiconductor unit, solid-state image pickup unit, and electronic apparatus

A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

Semiconductor device, manufacturing method, and electronic apparatus

There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

The present technology relates to a semiconductor apparatus, a solid-state image pickup device, an image pickup apparatus, and an electronic apparatus capable of improving impedance characteristics while preventing an occurrence of a flare and an interference due to a bonding jig, and achieving downsizing an apparatus. By aligning the heights of a cover glass and a semiconductor device, a distance between the cover glass and the semiconductor device is set to be minimum, and thus it is possible to suppress an occurrence of a flare due to incident light reflected on a side surface of the semiconductor device, and improve the impedance characteristics of the semiconductor device and the semiconductor image pickup device. Further, the interference of the jig used for the semiconductor device is reduced. The present technology can be applied to a CMOS image sensor.

Growing community of inventors

Kanagawa, Japan

Satoru Wakiyama