Sharp Kabushiki Kaisha Corporation

Satoru Tone

Hirokazu Yoshida

Motoji Shiota

Yasunori Chikawa

Atsushi Ono

Akio Inohara

Makoto Kanda

Norimitsu Nie

Naoki Makita

A semiconductor device () includes: a substrate (); a first thin film transistor (A) supported on the substrate (), the first thin film transistor (A) having a first active region () which mainly contains a crystalline silicon; and a second thin film transistor (B) being supported on the substrate (), the second thin film transistor (B) having a second active region () which mainly contains an oxide semiconductor having a crystalline portion.

Semiconductor device and method for manufacturing same

A semiconductor device includes a semiconductor substrate, a plurality of electrode pads aligned on the semiconductor substrate, and a plurality of bump electrodes placed on each electrode pad, wherein the plurality of bump electrodes on the electrode pad are aligned in a direction orthogonal to a direction where the electrode pads are aligned. A manufacturing method of the semiconductor device includes the steps of patterning a photoresist which serves as a bump electrode forming use mask on the semiconductor substrate having formed thereon the electrode pads and forming a bump electrode in a perpendicular straight wall shape to be thinner than the photoresist by plating the bump electrode forming use metal to the electrode pad.

Liquid crystal display device and/or circuit substrate including bump electrodes and electrode pads

Semiconductor device with bumps on electrode pads oriented in given direction

Semiconductor device including bump electrodes

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Nara, Japan

Satoru Tone