Hitachi, Ltd.

Hitachi Engineering Service

Satoru Todoroki

Mitsuo Nakatani

Hiroshi Kikuchi

Hitoshi Oka

Yasushi Sano

Toshiyuki Koshita

Michio Tsukii

Masato Kikuchi

Masahiro Tanaka

Takanori Ninomiya

Mikio Hongo

Takuya Fukuda

Masaaki Okunaka

Kazuo Suzuki

Kazushi Yoshimura

Junji Sato

Kunihiko Watanabe

Shigenobu Maruyama

Hideo Matsuzaki

Shunichi Hirose

Fumikazu Ito

A method and apparatus for inspecting wirings of an electronic circuit substrate to detect a defect in the wiring and for enabling correction thereof. The inspection method and apparatus include electrostatically coupling at least one electrode to a wiring pattern, applying a time varying voltage between the electrode and wiring pattern at different locations so as to detect a current flow and determine a defect by a variation in the detected current flow at the different locations and a portion of the defect. A defect in the form of a disconnected or half-disconnected point of the wiring may be corrected by supplying a solution of a metal complex to the disconnected or half-disconnected point, heating the solution and end point areas of the disconnected or half-disconnected point by laser light and precipitating a metal thin film establishing a connection of the wiring.

Method and apparatus for inspection and correction of wiring of

A liquid crystal display device is produced by effecting in the course of its production steps a resist-peeling method including the steps of (a) changing the quality of a resist layer on a substrate, (b) contacting the changed resist with a liquid containing 2-amino-1-ethanol, and (c) removing the liquid containing the thus peeled resist from the surface of the etched resist, and optionally, (d) regenerating a liquid containing 2-amino-1-ethanol by distillation from the liquid used in step (c) and reusing the regenerated liquid in step (b).

Process for stripping photoresist while producing liquid crystal display

A resist is peeled without leaving a residue after peeling, by bringing a resist-peeling liquid comprising a primary aliphatic amine of 2-6 carbon atoms into contact with the surface of an etched novolak positive photoresist, and removing the resist-peeling liquid containing the thus peeled resist from the surface of the etched resist. The used resist-peeling liquid can easily be recovered and regenerated.

Resist-peeling liquid and process for peeling a resist using the same

A microwave plasma enhanced CVD method and apparatus wherein a microwave is applied, after expanded, over a greater area than the area in which a desired thin film is to be formed. With this arrangement, uniform microwave application is assured to produce uniform plasma over a wide area. This enables realization of a large size liquid crystal display.

Thin film transistor having enhance stability in electrical

The present invention relates to a microwave plasma processing apparatus for processing such as thin film formation, etching, sputtering, and plasma oxidation, etc., on a surface of a processing object by utilizing a high density plasma generated by electron cyclotron resonance. A vacuum vessel of the apparatus, in which a microwave transmitted by a microwave guide is utilized for converting gas supplied to the vacuum vessel to plasma for the plasma processing of the processing object placed in the vacuum vessel, is formed in, such manner that the interior space of the vacuum vessel extends beyond the outer periphery of magnetic field generating coils, and the extended portion of the vessel is provided with a gas outlet for connection with an evacuation apparatus to evacuate the interior of the vacuum vessel to a desired vacuum degree. Accordingly, preferable evacuating characteristics can be obtained even in a case when a large amount of the reaction gas is supplied to the vacuum vessel in order to process a large size processing object, because the vacuum vessel in which the processing object is placed can be connected with the evacuation apparatus through a space and the same effect as if the evacuation apparatus is directly connected with the vacuum vessel is realized.

Microwave plasma processing apparatus

Growing community of inventors

Yokohama, Japan

Satoru Todoroki