Asahi Glass Company, Limited

Satoru Takaki

Takuji Oyama

Kenji Tanaka

Shinya Kikugawa

Eiichi Ando

Koji Nakagawa

Yasuo Hayashi

Junichi Shimizu

Hisashi Osaki

Ryohei Satoh

Shujiro Watanabe

Kazuo Sato

Junichi Ebisawa

Nobutaka Aomine

Yasuhiko Akao

Masami Miyazaki

Reo Usui

Kenichi Ebata

Hiromichi Nishimura

Kaname Okada

Yuki Kawamura

Koichi Suzuki

Hiroshi Sakamoto

Naoki Hashimoto

Akira Takada

Yosuke Sato

Toshihiko Higuchi

Teruo Fujiwara

Yumiko Aoki

Yuzo Shigesato

Hiroyasu Kojima

Masao Miyamura

Yoshinori Iwata

Eiji Morinaga

Kazuhiko Mitarai

Katsumi Inoue

Takeshi Harano

To provide a glass substrate with protective glass which suppresses formation of microscopic scratches on the back surface of the glass substrate in the production process for a display device, and which prevents a strength decrease in the process or formation of etch pits after a chemical etching treatment; a process for producing a display device by using the glass substrate with protective glass; and a double-sided removable resin sheet for the glass substrate with protective glass. A glass substrate with protective glass, which comprises a glass substrate and a protective glass plate laminated on each other, and which is characterized in that the glass substrate and the protective glass plate are laminated by a double-sided removal resin sheet.

Glass substrate with protective glass, and process for producing display device using glass substrate with protective glass

A method for manufacturing a circuit pattern-provided substrate including forming a resist layer on a substrate, forming an opening corresponding to a circuit pattern and having an eaves cross-sectional shape in the resist layer, forming a thin film layer having a portion formed on the substrate in the opening and a portion formed on the resist layer, and removing the resist layer such that the resist layer and the portion of the thin film layer formed on the resist layer are removed from the substrate. The forming of the opening comprises exposing the resist layer with a mask device which changes an exposure amount of the resist layer such that the eaves cross-sectional shape has a space at a boundary between the resist layer and the substrate.

Method for manufacturing circuit pattern-provided substrate

The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.

Mask blanks

A process for producing a glass substrate having a circuit pattern is disclosed. The process includes forming a thin film layer on a glass substrate and then irradiating the thin film layer with laser light to form a circuit pattern on the glass substrate; depositing a low-melting point glass having a softening point of fromto&#xb0; C. on the glass substrate having the circuit pattern formed thereon; and sintering the low-melting point glass to form a low-melting point glass layer which includes the low-melting point glass sintered on the glass substrate having the circuit pattern formed thereon and which forms a compatible layer between the glass substrate and the low-melting point glass layer.

Glass substrate having circuit pattern and process for producing the same

To provide a method for forming electrodes and/or black stripes for a plasma display substrate, wherein display electrodes, bus electrodes and optionally black stripes for a plasma display panel are formed of the same material by the same dry step, whereby a clear image having reflection prevented, can be displayed on a PDP display device with a low load on the environment, at low costs, with low resistance, without erosion by a dielectric. A method for forming electrodes and/or black stripes for a plasma display substrate, which comprises applying a laser beam to a mask layer formed on a transparent substrate to form openings at areas corresponding to the respective patterns of display electrodes, bus electrodes and optionally black stripes, then continuously forming an antireflection layer to provide an antireflection effect over the entire surface and an electrode layer, and applying again a laser beam to peel off the mask layer and at the same time to remove an unnecessary thin film layer.

Method for forming electrodes and/or black stripes for plasma display substrate

An antireflection substrate comprising a substrate which is transparent to ultraviolet and vacuum ultraviolet rays in the wavelength region from 155 nm to 200 nm and a mono-, bi- or tri-layer antireflection film formed on at least one side of the substrate, wherein the refractive index and the physical thickness of the antireflection film at the center wavelength &lgr; of the wavelength region of ultraviolet or vacuum ultraviolet light which needs antireflection satisfy particular conditions, and an optical component for a semiconductor manufacturing apparatus and a substrate for a low-reflection pellicle which is the ultraviolet and vacuum ultraviolet antireflection substrate.

Ultraviolet and vacuum ultraviolet antireflection substrate

A method for forming an optical thin film having multiple optical layers on the surface of a substrate using a magnetron sputtering apparatus with a sputtering chamber having cathodes, the substrate, and at least two kinds of targets disposed therein. An inert gas and a reactive gas are introduced into the sputtering chamber to form at least some of the multiple optical layers on the substrate by successively alternately repeatedly forming at least two kinds of optical layers each having a different optical constant by means of the reactive magnetron sputtering apparatus under a condition of a discharge pressure being no greater than 1.3&times;10 Pa.

Method for preparing an optical thin film

An antireflection substrate comprising a substrate which is transparent to ultraviolet and vacuum ultraviolet rays in the wavelength region from 155 nm to 200 nm and a mono-, bi- or tri-layer antireflection film formed on at least one side of the substrate, wherein the refractive index and the physical thickness of the antireflection film at the center wavelength &lgr; of the wavelength region of ultraviolet or vacuum ultraviolet light which needs antireflection satisfy particular conditions, and an optical component for a semiconductor manufacturing apparatus and a substrate for a low-reflection pellicle which is the ultraviolet and vacuum ultraviolet antireflection substrate

A method for forming an oxide film on a substrate by a sputtering process using a target comprising a metal as the main component, wherein sputtering is carried out in an atmosphere which contains a gas containing carbon atoms.

Oxide film, laminate and methods for their production

A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.

Methods for producing functional films

A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n&plus;1) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

Transparent conductive film and process for forming a transparent electrode

Transparent conductive films are provided which provide high sheet resistance, high transparency, high heat resistance and high moisture resistance, wherein the transparent conductive films contain either (a) an oxide film made of a mixed oxide of indium and tin and doped with at least 0.01 and less than 0.6 weight % of nitrogen and a geometrical thickness of from 5 to 25 nm or (b) an oxide film made of a mixed oxide of indium and tin, wherein the oxide film contains tin within a range of from 4.2 to 8.3 atomic % based on indium and a geometrical thickness of from 5 to 20 nm, and where in each case (a) and (b) the oxide film has a light transmittance of more than 90% at a wavelength of 550 nm, transparent conductive film-coated substrates prepared therefrom and touch panels prepared from the transparent conductive film-coated substrates.

Transparent conductive film and method of making the film

A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n&plus;l) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.

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Yokohama, Japan

Satoru Takaki