Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kobe Precision Inc.

Other

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Satoru Takada

Tetsuo Suzuki

Toshiki Sato

Mamoru Hosokawa

Yoshihiro Hara

Kazuo Muramatsu

Jun Suzuki

Masami Takao

Akihiko Tatsumi

Sho Katsura

Hidetoshi Inoue

Kenichi Inoue

Toshiyuki Tanaka

Motoharu Sato

Kazunori Kobayashi

Yusuke Takahashi

Hideki Yamamuro

Nobuhiro Ohta

Shunsuke Takada

Hiroko Nagata

Manabu Hisada

Hideo Ashida

Nobuhiro Ota

An aqueous solution for metal surface treatment includes an alkyl silicate or an oligomer thereof in a concentration of 0.005 mass % or more and less than 1 mass %, and an organic silane compound in a concentration of 0.005 mass % or more and less than 1 mass %. The aqueous solution has a pH of 2 or more and 7 or less.

Aqueous solution for metal surface treatment, treatment method for metal surface, and joined body

An aluminum alloy substrate bears a first layer on at least one side thereof, and a second layer on at least part of the first layer. The first layer includes an oxide film containing Mg in a content of from 0.1 atomic percent to less than 30 atomic percent. The second layer contains siloxane bonds. The second layer is disposed in a mass of coating of from 0.1 mg/mto less than 30 mg/m. Assume that parallel polarized light is applied to the side bearing the first layer and the second layer at an incident angle of 75&#xb0;, and resulting data are analyzed by Fourier-transform infrared spectroscopy to give a spectrum. In the spectrum, a peak occurring adjacent to 1057 cmhas an area of 0.01 or more with respect to a base line drawn from 1026 cmto 1084 cm.

Aluminum alloy sheet, bonded object, and member for motor vehicle

An aluminum alloy comprising more than 3.5% and up to 6.0% of Mg, 0.02 to 1.0% inclusive of Cu, 0.02 to 0.1% inclusive of Cr, and a remainder made up by Al and unavoidable impurities, wherein the contents of Si and Fe in the unavoidable impurities are limited to 0.05% or less and 0.05% or less, respectively, and wherein the number of intermetallic compound particles contained in the aluminum alloy and having a maximum length of 4 &#x3bc;m or more is 50 particles or less per 1 mmof an arbitrary cross-sectional area of the aluminum alloy. An aluminum alloy is provided, which has excellent anodic-oxidation-treatability and can be used for providing an anodic-oxidation-treated aluminum alloy member having high withstand voltage properties and such excellent heat resistance that the occurrence of cracking under high temperatures conditions can be prevented.

Aluminum alloy having excellent anodic oxidation treatability, and anodic-oxidation-treated aluminum alloy member

Provided is an electrode material with excellent tab weldability and realizing decreased contact resistance with an active material layer. A collector (electrode material) () is provided with a metal foil substrate () and a carbon-containing conductive substance (), and is configured such that, when observed from a square viewfield with a surface area of 0.1 mm, the conductive substance () is arranged in islands on the surface of the substrate () with a 1-80% coverage ratio of the conductive substance () on the surface of the substrate ().

Electrode material and manufacturing method thereof

Provided is an anodized aluminum film formed on a surface of a substrate that comprises aluminum or an aluminum alloy, the anodized aluminum film having a structure constituted of a single anodized film layer or a structure composed of superposed anodized film layers of two or more different kinds, wherein the outermost anodized film has a degree of film formation, defined by equation (1), of 1.3 or more and the proportion of the thickness of this anodized film in the entire film thickness is 3% or higher. Thus, the anodized aluminum film is inhibited from cracking in bent portions. As a result, the substrate is inhibited from corroding in corrosive-gas atmospheres, and a decrease in withstand voltage characteristics due to film cracking is inhibited. With this anodized aluminum film, enhanced withstand voltage characteristics can hence be attained:Degree of film formation=(thickness of anodized film)/(substrate thickness loss by anodization)&#x2003;&#x2003;(1).

Anodized aluminum film

An electrode material which has excellent tab weldability, realizes reduction of a contact resistance with an active material layer, and has good adhesion with a conductive material disposed in an island shape, is provided. An electrode materialincludes a substrateincluding a metal foil and a conductive materialcontaining carbon, wherein the conductive materialis disposed in an island shape on the surface of the substratewhen observed with a visual field of 300 &#x3bc;m square, and the conductive material is fixed to the surface of the substrate together with a hydrophobic resin and a water-soluble resin.

Electrode material, electrode material manufacturing method, electrode, and secondary battery

An aluminum-alloy plate () equipped with an aluminum-alloy substrate () and an aluminum-oxide film () formed on the surface of the aluminum-alloy substrate (), wherein: the aluminum-oxide film () contains at least one type of additional element having a P-B ratio of 1.00 or more, zirconium in the amount of 0.01-10 atomic percent, and magnesium in the amount of 0.1 or more and less than 10 atomic percent; and the total amount of additional elements contained in the aluminum-oxide film () is 0.010-5.0 atomic percent. As a result, it is possible to provide: an aluminum-alloy plate which exhibits excellent post-degreasing-water-wettability stability even when in a high-temperature, high-humidity environment; and a joined body and a vehicle member which use the same.

Aluminum-alloy plate and joined body as well as automobile member using the same

A fuel cell separator () which comprises a base () constituted of titanium or a titanium alloy and a conductive carbon layer () that was formed by press-bonding a carbon powder to the base () and that covers the surface thereof; an interlayer () having been formed between the base () and the carbon layer (). The interlayer () has been formed by a heat treatment in an atmosphere containing a slight amount of oxygen, contains titanium carbide yielded by the reaction of the Ti of the base () with the C of the carbon layer (), and has an oxygen content of 0.1-40 at %.

Fuel cell separator

A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300&#xb0; C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

Method of reclaiming silicon wafers

The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

Polishing slurry and method of reclaiming wafers

A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.

Specifying method for Cu contamination processes and detecting method for Cu contamination during reclamation of silicon wafers, and reclamation method of silicon wafers

A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

Method for reclaiming wafer substrate and polishing solution compositions therefor

A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.

Process for reclaiming wafer substrates

A carbon substrate manufacturing method includes a hot molding step, a burn-carbonizing step, a hot isostatical pressure treatment step, and a mirror polishing step. In the hot molding step, molding is performed while heating thermosetting resin powders to be a hard carbon substrate after burn-carbonizing, where the thermosetting resin powders are of a particle size 150 .mu.m or more, HPF 80-150 mm, a moisture content 1.0-3.0 weight %, Fe, Ni, Si and Ca respectively 5 ppm or less. In the burn-carbonizing process, a disk shaped resin molded body is filled into a graphite cylinder and burn-carbonized by heating from the external while the condition therefor is maintained in that the disk shaped resin molded body is stacked holding therein a graphite spacer at every one sheet basis or at every plurality of sheet basis and is loaded on its top with a tungsten carbide weight, where the graphite spacer has a heat conductivity 100 kcal/m.hr..degree. C. or less, a bulk density 1.70-1.85, and a flatness degree 10 .mu.m or less.

Method of manufacturing carbon substrate

The surface of a blank for a textured amorphous carbon substrate is polished in a surface with a predetermined surface roughness, and then the blank with a polished surface is heated at a predetermined temperature in an oxidizing atmosphere to form minute irregularities in the polished surface through a reaction expressed by C+O.sub.2 =CO.sub.2 so that the surface is textured in an appropriate surface roughness. A randomly textured amorphous carbon substrate has a randomly textured surface with a surface roughness Ra in the range of 20 to 100 .ANG. and the ratio Ra.sub.2 /Ra.sub.1, where Ra.sub.1 is the surface roughness with respect to a circumferential direction, and Ra.sub.2 is the surface roughness with respect to a radial direction, in the range of 0.75 to 1.25 .ANG.. A concentrically textured amorphous carbon substrate has a concentrically textured surface with a surface roughness Ra in the range of 30 to 100 .ANG. or in the range of 40 to 200 .ANG., and the ratio Ra.sub.2 /Ra.sub.1 of 1.75 or greater.

Growing community of inventors

Kobe, Japan

Satoru Takada