Sanyo Electric Co., Ltd.

Satoru Sekine

Shinji Furuichi

Atsushi Wada

Shigeharu Matsushita

Yoh Takano

Yoshitaka Ueda

Takashi Asano

A flip-flop circuit operates by a first clock signal whose amplitude is smaller than that of input data D. A pair of transistors receive the input data D and the reversed input data *D, respectively, to latch the input data D. An activation circuit activates the pair of transistors in a conduction state. A control circuit receives the first clock signal and sets the activation circuit to a conduction state for a predetermined time period starting from an edge timing of the received first clock signal. The control circuit increases the amplitude of the first clock signal and sets the activation circuit in a conduction state by using a second clock signal which is the first clock signal with the increased amplitude.

Flip-flop circuit that latches inputted data

A plurality of flip-flop circuits, having different circuit configurations, which perform an identical digital signal processing are mixed on a single semiconductor substrate. A first flip-flop circuit among the plurality of flip-flop circuits receives a clock signal supplied from outside the flip-flop circuits, through at least two stage inverters, and operates with clock signals outputted from the inverters. A second flip-flop circuit receives the clock signal supplied from outside the flip-flop circuits through at least one inverter having a less number of stages than the number of stages of the inverter contained in the first flip-flop circuit, and operates with at least one of the clock signal and a clock signal outputted from the inverter.

Semiconductor integrated circuit with flip-flop circuits mounted thereon

A ferroelectric memory capable of improving disturbance resistance in a non-selected memory cell includes a bit line, a word line arranged to intersect with the bit line, and a memory cell, which is arranged between the bit line and the word line an includes a ferroelectric capacitor and a diode serially connected to the ferroelectric capacitor. Thus, when a voltage in a range hardly feeding a current to the diode is applied to a non-selected cell in data writing or data reading, substantially no voltage is applied to the ferroelectric capacitor.

Growing community of inventors

Gifu, Japan

Satoru Sekine