Semiconductor Energy Laboratory Co., Ltd.

Honda Motor Co., Ltd.

Satoru Saito

Shunpei Yamazaki

Atsuo Isobe

Kenichi Okazaki

Daisuke Ueno

Kanomi Hayashi

Junichi Koezuka

Shinichi Kawano

Jun Koyama

Masashi Tsubuku

Yukinori Shima

Tetsuji Yamaguchi

Daisuke Kurosaki

Noritaka Ishihara

Saishi Fujikawa

Terumasa Ikeyama

Hiroyuki Miyake

Masami Jintyou

Hideaki Shishido

Yasutaka Nakazawa

Yutaka Matsumoto

Mayumi Yamaguchi

Toshimitsu Obonai

Katsuyuki Nakajima

Kenichi Ohno

Rai Sato

Akihiro Nemoto

Masayoshi Dobashi

Akinori Higuchi

Takashi Shiraishi

Kazushige Nakatsuka

Seiichi Sasaki

Nobuyuki Kouda

A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer. It is preferable that the semiconductor layer include a first region, a pair of second regions, and a pair of third regions; the first region overlap with the first insulating layer and the metal oxide layer; the second regions between which the first region is sandwiched overlap with the first insulating layer and not overlap with the metal oxide layer; the third regions between which the first region and the pair of second regions are sandwiched not overlap with the first insulating layer; and the third regions be in contact with the second insulating layer.

Semiconductor device

A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25&#xb0; C.) to 120&#xb0; C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.

A novel oxide semiconductor film. An oxide semiconductor film with a small amount of defects. An oxide semiconductor film in which a peak value of the density of shallow defect states at an interface between the oxide semiconductor film and an insulating film is small. The oxide semiconductor film includes In, M (M is Al, Ga, Y, or Sn), Zn, and a region in which a peak value of a density of shallow defect states is less than 1E13 per square cm per volt.

Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device

A coil segment manufacturing apparatus includes a conducting wire material feeder which repeatedly feeds a conducting wire material while changing the feeding amount and interposing a processing time, a coating remover which removes an insulation coating of the conducting wire material at a removal position each time the processing time is reached, and a conducting wire material cutter which cuts the conducting wire material each time the processing time is reached.

Coil segment manufacturing apparatus

Coil segment manufacturing method

To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide semiconductor film over the first gate insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The atomic proportion of In is larger than the atomic proportion of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) in the first oxide semiconductor film, and the atomic proportion of In in the second oxide semiconductor film is smaller than that in the first oxide semiconductor film.

Semiconductor device and display device including the semiconductor device

An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer.

A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.

Semiconductor device including first gate oxide semiconductor film, and second gate

A conductive wire piece supply method includes the steps of: obtaining a conductive wire piece set using a first slot which receives conductive wire pieces, having been sent, with the conductive wire pieces vertically superposed on each other; carrying the conductive wire piece set from the first slot portion to the second slot portion; and rotating the second slot portion.

Conductive wire piece supply method and conductive wire piece supply device

An arrangement apparatus and an arrangement method of allowing gripping devices to grip electrical conductors by using inexpensive, simple, and small-sized configurations. A stator manufacturing apparatus for arranging coil elements in a ring shape includes: a plurality of gripping devices that are arranged in a ring shape and grip coil elements; robot arms that supply the coil elements to the gripping devices; and a turntable that integrally rotates the plurality of gripping devices. According to this, the gripping devices are rotated by the turntable is aligned in a ring shape, and thus, the coil elements are supplied to the arrangement points by the robot arms and the plurality of coil elements can be aligned in a ring shape while gripped by the gripping devices.

Arrangement apparatus and arrangement method

Provided is a metal ring manufacture method and a metal ring metal device capable of manufacturing a plurality of metal rings at good efficiency without damaging the metal rings. The metal rings (R) are detached from a drum retaining unit () by a metal ring holding unit () with the arrangement state thereof being maintained; thereafter, each metal ring (R) clamped in the arrangement state by a pair of fingers () of a metal ring clamping unit () is delivered sequentially in the arrangement direction by a ring delivering unit disposed in the second finger ().

Metal ring manufacture method and metal ring manufacture device

It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multilayer, and a hat-shaped gate electrode is formed by having the longer gate length of a lower-layer gate electrode than that of an upper-layer gate electrode. At this time, only the upper-layer gate electrode is etched by using a resist recess width to form the hat-shaped gate electrode. Accordingly, an LDD region can be formed also in a fine TFT; thus, TFTs having a structure depending on each circuit can be manufactured separately.

Method for manufacturing semiconductor device including hat-shaped electrode

A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with beat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

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Tochigi, Japan

Satoru Saito