The University of Tokyo

Satoru Nakatsuji

Mitsuru Takenaka

Akito Sakai

Ryo Shimano

Yusuke Horinouchi

Masamitsu Hayashi

Junji Yumoto

Tomoya Higo

A photonic spin register includes: a shift register unit including a magnetic material layer having a shape extending in one direction; and a write unit configured to write spin information into a magnetic domain in the magnetic material layer by transferring information included in an optical signal that is a pulse amplitude-modulated and serial input signal, to a spin state of the magnetic domain in the magnetic material layer by means of a photocurrent corresponding to the optical signal or by irradiation with the optical signal. When a shift current flows through the shift register unit in the one direction, a domain wall is configured to move in the magnetic material layer, thereby allowing the spin information to move and be buffered in the magnetic material layer.

Photonic spin register, information writing method, and information read-out method

A thermoelectric conversion element is made of a material with a band structure having Weyl points in the vicinity of Fermi energy. The thermoelectric conversion element has a thermoelectric mechanism for generating electromotive force by the anomalous Nernst effect. A thermoelectric conversion device includes a substrate; and a power generator provided on the substrate and including a plurality of thermoelectric conversion elements. Each of the plurality of thermoelectric conversion elements has a shape extending in one direction, and is made of a material identical to that of the above-mentioned thermoelectric conversion element. The plurality of thermoelectric conversion elements is arranged in parallel to one another in a direction perpendicular to the one direction and electrically connected in series to one another in a serpentine shape.

Thermoelectric conversion element and thermoelectric conversion device

A memory element includes a free magnetization layer ('FR-ML') in a film form, a nonmagnetic layer ('NML'), and a fixed magnetization layer (&#x201c;FX-ML&#x201d;), The NML and FX-ML are stacked on the FR-ML. The FR ML stores a single bit of data &#x201c;0&#x201d; or &#x201c;1&#x201d; according to a magnetization direction and rewrites the data by reversing the magnetization direction. An antiferromagnet that exhibits the anomalous Hall effect and has a reversible magnetization direction is used for the FR-M. The reversal of the magnetization direction of the FR-ML is performed using the FX-ML by the spin-transfer torque technique. To read data, a reading current is caused to flow in one direction, and a Hall voltage generated in the FR-ML by the anomalous Hall effect is extracted from the FR-ML. The polarity of the Hall voltage is reversed in accordance with the magnetization direction of the FR-ML.

Memory element

Growing community of inventors

Tokyo, Japan

Satoru Nakatsuji