Fujifilm Corporation

Satoru Murayama

Tetsuya Kamimura

Tetsuya Shimizu

Kazuto Shimada

Hidenori Takahashi

Yoshihiro Jimbo

Daisuke Sasaki

Naotsugu Muro

Reiji Higuchi

Takashi Katoh

Kyohei Arayama

Makoto Kubota

Takuya Tsuruta

Keisuke Arimura

Yutaro Norizuki

A pattern forming method including forming a film using an actinic ray-sensitive or radiation-sensitive resin composition; exposing the formed film; and treating the exposed film using a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

Pattern forming method and method for manufacturing electronic device

A method for manufacturing an electronic device, the method including performing a treatment using a treatment liquid for manufacturing a semiconductor, the treatment liquid for manufacturing a semiconductor includes: a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; water; and one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A ratio Tof a total mass of the metal atoms to the sum of a total mass of the additive and the total mass of the metal atoms is in a range from 1 ppt to 1 ppm.

Method for manufacturing electronic device

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

Treatment liquid for manufacturing semiconductor and pattern forming method

An object of the present invention is to provide a treatment liquid which is capable of suppressing the generation of defects of a semiconductor device and has excellent corrosion resistance and wettability. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, containing at least one organic solvent selected from the group consisting of ethers, ketones, and lactones, water, and a metal component including at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, in which the content of water in the treatment liquid is 100 ppb by mass to 100 ppm by mass and the content of the metal component in the treatment liquid is 10 ppq by mass to 10 ppb by mass.

Treatment liquid and treatment liquid housing body

A curable composition which can be used to produce a cured film that does not easily allow a near infrared-absorbing pigment to be eluted even when the cured film is immersed in a solvent is provided. A cured film, a near infrared cut filter, a camera module, and a method for manufacturing a camera module are also provided. The curable composition includes: a near infrared-absorbing pigment (A) and a curable compound (B) having one or more atoms or groups selected from a fluorine atom, a silicon atom, a linear alkyl group having 8 or more carbon atoms, and a branched alkyl group having 3 or more carbon atoms.

Curable composition, cured film, near infrared cut filter, camera module and method for manufacturing camera module

The present invention relates to an infrared sensor, a near-infrared ray absorption composition, a photosensitive resin composition, a compound, a near-infrared ray absorption filter, and an image pick-up device. Provided is an infrared sensorthat detects an object by detecting light in wavelengths of 900 nm to 1,000 nm, including infrared ray transmission filtersand near-infrared ray absorption filters, in which the near-infrared ray absorption filterscontains a near-infrared ray absorption substance having a maximum absorption wavelength in wavelengths of 900 nm to 1,000 nm.

Infrared sensor, near-infrared ray absorption composition, photosensitive resin composition, compound, near-infrared ray absorption filter, and image pick-up device

A solid-state imaging device comprises a CMOS sensor, a circuit board, a ceramic plate, an IR cut filter, a taking lens, a lens holder, and a support barrel. The CMOS sensor is mounted on the circuit board. The circuit board is fixed to the ceramic plate such that the CMOS sensor is placed inside an opening of the ceramic plate. The sides of the CMOS sensor are surrounded by the ceramic plate. The IR cut filter is fixed to the ceramic plate so as to cover the opening. The CMOS sensor is disposed behind the taking lens. The IR cut filter is disposed between the taking lens and the CMOS sensor. A light-shielding layer is formed over the entire periphery of edge portions of an incident surface of the IR cut filter. Harmful rays such as reflective light is blocked by the light-shielding layer.

IR cut filter, method for manufacturing the same, and solid-state imaging device

The present invention provides a green coloring composition for use in a color filter, which can form a green colored film having low incident-angle dependence and improves the color-separation properties of a solid-state imaging device including the colored film; and a colored film, a color filter, and a solid-state imaging device. The green coloring composition for use in a color filter of the present invention is a green coloring composition for use in a color filter, containing a green colorant, a near-infrared absorbent, and a polymerizable compound, in which when the green coloring composition for use in a color filter is used to form a colored film having a film thickness of 0.8 &#x3bc;m, the maximum value of the transmittance at a wavelength from 400 nm to 450 nm of the colored film is 5% or less, the maximum value of the transmittance at a wavelength from 500 nm to 600 nm of the colored film is 70% or more, the minimum value of the transmittance at a wavelength from 650 nm to less than 700 nm of the colored film is 20% or less, and the minimum value of the transmittance at a wavelength from 700 nm to 900 nm of the colored film is 30% or less.

Green coloring composition for use in color filter, colored film, color filter, and solid-state imaging device

A solid-state imaging device comprises an image sensor, a circuit board, a support plate, an IR cut filter, a taking lens, a lens holder, and a support barrel. The image sensor is mounted on the circuit board. The circuit board is fixed to the support plate with the image sensor placed inside an opening of a plate body of the support plate. The sides of the image sensor are surrounded by the support plate. The IR cut filter is fixed to the support plate so as to cover the opening. The image sensor is disposed on an exit surface side of the taking lens. The IR cut filter is disposed between the taking lens and the image sensor. A light-shielding layer is formed over entire periphery of an inner wall of the plate body. Harmful rays are blocked by the light-shielding layer.

Growing community of inventors

Haibara-gun, Japan

Satoru Murayama