Kokusai Electric Corporation

Toho Kasei Co., Ltd.

Satoru Murata

Shinya Morita

Seiyo Nakashima

Atsushi Hirano

Kosuke Takagi

Keishin Yamazaki

Mikio Ohno

Tetsuya Marubayashi

Hiromi Okada

Haruo Morikawa

Kiyoaki Yamada

Masashi Suzuki

Tomoyuki Kurata

Iwao Nakamura

A gas supply structure capable of suppressing damage to a structure provided in a reaction tube and made of the non-metallic material such as quartz includes: a gas supply nozzle through which a process gas is supplied into a process chamber in a reaction tube via an opening; a first seal provided so as to cover at least a gap between the opening of the reaction tube and the gas supply nozzle; a holder connected to the gas supply nozzle so as to provide a gap between the gas supply nozzle and the holder; an adapter connected to the holder; a first fixing structure configured to hold the holder and the adapter; and a second seal provided so as to cover at least a gap between the gas supply nozzle and the adapter and maintain a space between the gas supply nozzle and the adapter in an airtight state.

Gas supply structure and substrate processing apparatus

Reaction tube

Exhaust liner for reaction tube

Separator of substrate processing apparatus

Adiabatic plate for substrate processing appratus

Gas inlet attachment for wafer processing apparatus

Boat of substrate processing apparatus

A substrate processing apparatus includes a reaction tube defining a substrate processing chamber; a gas inlet provided at a lower portion of the reaction tube to supply a process gas; a first buffer unit for temporarily retaining the process gas, the first buffer unit at a first side of an inner surface of the reaction tube and includes a plurality of gas supply holes; and a gas outlet provided at a second side of the inner surface of the reaction tube opposite to the first side, to exhaust the process gas from the process chamber. The gas supply holes are provided from an upper end portion of the first buffer unit to a lower end portion of the first buffer unit, and the process gas is supplied through the plurality of gas supply holes into the process chamber, passes through the process chamber, and exhausted through the gas outlet.

Reaction tube structure and substrate processing apparatus

Described herein is a technique capable of suppressing an air atmosphere from entering a process chamber. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a process chamber having a first space where the substrate is processed; an exhaust part configured to exhaust atmosphere of the first space; and a gas supply system including: a gas introduction pipe configured to supply gas to the first space; a process gas transfer pipe configured to communicate with the gas introduction pipe; a joint part configured to cover an adjacent part provided adjacent to the gas introduction pipe and the process gas transfer pipe in a second space outside the first space, and configured to fix the gas introduction pipe with the process gas transfer pipe; and a pressure adjustment part provided between the adjacent part and the second space.

Substrate processing apparatus

Sealing material ring for a semiconductor manufacturing apparatus

A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction tube, and an extension portion formed to extend downward from a lower end of the flange, the extension portion being formed to have a thickness larger than a thickness of the reaction tube at a position corresponding to the substrate treatment region, and being configured to cover an inner circumferential surface of the furnace opening member. An inner surface of the extension portion protrudes more inward than an inner surface of the reaction tube at the position corresponding to the substrate treatment region.

Substrate treatment apparatus including reaction tube with opened lower end, furnace opening member, and flange configured to cover upper surface of the furnace opening member

Growing community of inventors

Toyama, Japan

Satoru Murata