Kanegafuchi Chemical Industry Co., Ltd.

Kanegafuchi Kagaku Kogyo Kabushiki Kaisha

Satoru Murakami

Yoshihisa Tawada

Minori Yamaguchi

Takehisa Nakayama

Akimine Hayashi

Yoichi Hosokawa

Masataka Kondo

Hiromi Maeda

Tomoyoshi Zenki

Tadashi Obayashi

Hideo Yamagishi

Hitoshi Nishio

Akihiko Hiroe

Eiichi Yoshida

Seishiro Mizukami

Shinichiro Kurata

Keiko Miki

Masataka Konda

Masahiko Hosomi

Kenji Kobayashi

The invention relates to an image sensor for use in the facsimile device, image reader, digital scanner and the like. In this image sensor, the photodiodes and blocking diodes formed on an insulating board are insulated by a transparent interlayer insulating film and are connected in series and opposite polarity by coupling electrodes through contact holes in the transparent interlayer insulating film. This image sensor features a high reading speed and a low dark output noise.

Image sensor

An image reading apparatus and method in which a plurality of photoelectric energy converting elements disposed in a one-dimensional array is divided every m elements into n first blocks B.sub.1, B.sub.2, . . . , B.sub.n, driving voltages are applied sequentially to the units of m photoelectric energy converting elements in the first blocks B.sub.1, B.sub.2, . . . , B.sub.n, and the electrical signals of the photoelectric energy converting elements are read out. The drive side on which the driving voltage is sequentially applied to the above-mentioned divided n first blocks, B.sub.1, B.sub.2, . . . , B.sub.n is further divided every x first blocks into y second blocks C.sub.1, C.sub.2, . . . , C.sub.y, and are provided a first voltage application means which applies a first driving voltage (D1, D2, . . . , Dy) in sequence to the units of x first blocks B.sub.1, B.sub.2, . . . , B.sub.x in the second blocks C.sub.1, C.sub.2, . . . , C.sub.y, a second voltage application means which applies a second driving voltage (E1, E2, . . . , Ex) in sequence to the first blocks B.sub.1, B.sub.2, . . . , B.sub.x in the same relative positions in the respective second blocks C.sub.1, C.sub.2, . . . , C.sub.y and a matrix driver which applies the driving voltage to drive the units of m photoelectric energy converting elements 10, 12 in the appropriate first blocks when the above-mentioned first driving voltage and second driving voltage are applied simultaneously to the first blocks B.sub.1, B.sub.2, . . . , B.sub.n.

Image reading apparatus and method for driving appropriate photoelectric

The invention seeks to reduce residual image in the vertical direction, which is the most significant drawback in the charge storage system, and further to permit increased speed of operation to be obtained. To this end, an image sensor of matrix drive type according to the invention comprises m by n diode pairs each including a photo- and a blocking diode PD and BD with the cathode electrodes thereof connected in series, the diode pairs constituting n blocks B.sub.1,B.sub.2 . . . , Bn each of m diode pairs. A clamp diode CD is connected to the juncture between the photo- and blocking diodes PD and BD in each diode pair to clamp the potential on the juncture and thus permit complete and quick charging of the capacitance of the photo-diode PD.

Image sensor utilizing photo diode, blocking diode and clamping diode

In a light sensitive semiconductor unit having a plurality of light sensitive semiconductor cells connected in series, the light receiving area or size of the light sensitive semiconductor cells is increased as the distance from the center of the unit increases so that every light sensitive semiconductor cell can generate generally equal short circuit current even if the light intensity is decreased as the distance between the light sensitive semiconductor cell and light source increases, whereby a high operating voltage can be obtained.

Light sensitive semiconductor device

A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductive layers is made of a transparent material, and at least the other conductive layer and the semiconductor layer are provided with a plurality of common apertures extending in the thickness direction. At least one of the conductor layers is provided with one or two pairs of electrodes of opposite polarity and positioned in its marginal regions. The sensor element is light transparent. A feedback circuit is provided to insure that the incident light is constant.

Position sensor and picture image input device

In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, the base layer of the LE converting unit is formed of a material such that the base layer does not substantially absorb the X rays so that the image of the LE converting unit does not appear on the picture of the object.

X ray detecting device

A photo sensor array includes at least one transparent substrate and a photo sensitive portion provided on the substrate. An optical fiber portion is arranged in a transparent substrate whereinto light from a radiating portion enters. An optical unit or selfoc lens for transferring an image to a photo sensor portion can be omitted so that the device can be miniaturized. A reader utilizing the above photo sensor array is also disclosed.

Photo sensor array and reader with hexagonal fiber bundles

A transparent semiconductor light beam position sensor element comprises a semiconductor layer consisting of p-, i- and n-type semiconductor layers successively bonded in junction and an electrically conductive layer disposed on either side of the semiconductive layer, at least one of the conductive layers being material transparent material, at least the other conductive layer and the semiconductor layer being provided with a multiplicity of common apertures running in the thickness direction and at least one conductive layer being provided with one pair or two pairs of electrodes of opposite polarities as disposed in its marginal regions. A position sensor utilizing the sensor element comprises a light source capable of varying the position of incidence of light on the position sensor element and a means for detecting the level of light incident on the element and holding the level constant, wherein the point of incidence of light can be identified from the photoelectric current output from one electrode of the electrode pair. A picture image input device utilizing the semiconductor light beam position sensor element further comprises a means for outputting a position signal representative of the point of incidence of light on the sensor element according to the photoelectric current output derived from the electrode pair and a means for outputting a bright dark signal representative of the intensity of light incident on the sensor element after passing or being reflected by an original according to the photoelectric current output derived from the electrode pair.

Growing community of inventors

Kobe, Japan

Satoru Murakami