Mitsubishi Materials Corporation

Ulvac, Inc.

Mitsubishi Metal Corporation

Satoru Mori

Kouichi Ishiyama

Shozo Komiyama

Toshio Sakamoto

Kiyoyuki Ookubo

Yuuki Yoshida

U Tani

Yuuji Sato

Toshiaki Ueda

Kazunari Maki

Akifumi Mishima

Yosuke Nakasato

Muneaki Watanabe

Kazunori Igarashi

Isao Arai

Hitoshi Maruyama

Kenichi Yaguchi

Satoshi Kumagai

Fumitake Kikuchi

Eiho Watanabe

Kazuo Watanabe

Sohei Nonaka

Souhei Nonaka

Shigeru Yamamoto

Akira Hayashi

Yuki Yoshida

Jun-ichi Oda

Ichirou Shiono

A sputtering target material contains one kind or two or more kinds selected from the group consisting of Ag, As, Pb, Sb, Bi, Cd, Sn, Ni, and Fe in a range of 5 massppm or more and 50 massppm or less, in terms of a total content; and a balance consisting of Cu and an inevitable impurity. In the sputtering target material, in a case in which an average crystal grain size calculated as an area average without twins is denoted by X1 (&#x3bc;m), and a maximum intensity of pole figure is denoted by X2, upon an observation with an electron backscatter diffraction method, Expression (1): 2500&#x3e;19&#xd7;X1+290&#xd7;X2 is satisfied, a kernel average misorientation (KAM) of a crystal orientation measured by an electron backscatter diffraction method is 2.0&#xb0; or less, and a relative density is 95% or more.

Sputtering target material

A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.

High purity copper sputtering target material

A Cu&#x2014;Ga alloy sputtering target of the present invention is made of a Cu&#x2014;Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 &#x3bc;m or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 &#x3bc;m or more is 1% to 30%.

Cu&#x2014;Ga alloy sputtering target and method of manufacturing Cu&#x2014;Ga alloy sputtering target

A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

Copper alloy sputtering target and manufacturing method of copper alloy sputtering target

A copper ingot of the present invention which is casted by a belt-caster type continuous casting apparatus includes: 1 ppm by mass or less of carbon; 10 ppm by mass or less of oxygen; 0.8 ppm by mass or less of hydrogen; 15 ppm by mass to 35 ppm by mass of phosphorus; and a balance of Cu and inevitable impurities, and includes inclusions formed of oxides containing carbon, phosphorus, and Cu.

Copper ingot, copper wire material, and method for producing copper ingot

A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.

Sputtering target for forming protective film, and laminated wiring film

A sputtering target is provided for forming a protective film which is used for forming a protective film on a single surface or both surfaces of a Cu wiring film, the sputtering target including 5 to 15 mass % of Ni or Ni and Al in total (where the Ni content is 0.5 mass % or higher); 0.1 to 5.0 mass % of Mn; 0.5 to 7.0 mass % of Fe; and a balance including Cu and inevitable impurities.

Sputtering target for forming protective film and multilayer wiring film

Provided are a sputtering target composed of a Cu&#x2014;Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 &#x3bc;m or less, and exhibits the diffraction peaks assigned to the &#x3b3; and &#x3b6; phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the &#x3b6; phase is 10% or higher relative to that of the diffraction peaks assigned to the &#x3b3; phase.

Sputtering target and method for producing same

The present invention provides a sputtering target of a Cu&#x2014;Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a &#x3b3; phase and a &#x3b6; phase of a Cu&#x2014;Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the &#x3b3; phase is 30 &#x3bc;m to 100 &#x3bc;m, and an average grain size of the Na compound phases is equal to or less than 8.5 &#x3bc;m.

Cu&#x2014;Ga alloy sputtering target, and method for producing same

According to the present invention, a Cu&#x2014;Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu&#x2014;Ga alloy crystal particle in the sintered body has a structure in which &#x3b3; phase particles are dispersed in a &#x3b3;-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu&#x2014;Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1&#xb0; C./min to 1.0&#xb0; C./min, at a temperature having a range of 450&#xb0; C. to 650&#xb0; C.

Cu&#x2014;Ga alloy sputtering target and method for producing same

A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.

Sputtering target for forming protective film and laminated wiring film

A copper alloy sputtering target is made of a copper alloy having a composition containing Ca in a range of 0.3 mass % to 1.7 mass % with a remainder of Cu and inevitable impurities, a Ca-segregated phase () in which Ca is segregated is dispersed in a matrix phase, and the Ca-segregated phase contains a Cu-dispersed phase () made of Cu.

Copper alloy sputtering target

A method of forming a thin film interconnect in which a film is formed by sputtering method using a Cu&#x2014;Ca alloy target and a thin film interconnect formed by the method, the method comprising: forming a Cu&#x2014;Ca alloy film by sputtering method using a Cu&#x2014;Ca alloy target that contains 0.5 atomic % or more and less than 5 atomic % of Ca, and the balance consisting of Cu and unavoidable impurities; and performing heat treatment of the Cu&#x2014;Ca alloy film at a temperature of 300 to 700&#xb0; C. in an inert gas atmosphere containing trace amount of oxygen defined by oxygen partial pressure in the range of 10to 10atm.

Method of forming thin film interconnect and thin film interconnect

This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

Thin film transistor having a barrier layer as a constituting layer and Cu-alloy sputtering target used for sputter film formation of the barrier layer

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Okegawa, Japan

Satoru Mori