Fujitsu Corporation

Other

Fujitsu Vlsi Limited

Satoru Miyoshi

Taiji Ema

Masaya Katayama

Masayoshi Asano

Tatsumi Tsutsui

Kenichi Kanazawa

Wells of n- and p-type are formed in a p-type substrate. Wells of p-type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.

Method of manufacturing semiconductor device

There are provided a semiconductor device which can prevent short-circuit of the contact plugs and prevent exposure of wirings to ensure sufficient reliability even if level difference is caused in device isolation regions, and a method of manufacturing the same. Device isolation regions,are formed on a semiconductor substrate,to partition the semiconductor substrate,into a plurality of device regions,. Then, word lines,are formed on the semiconductor substrate,, and then peripheral regions of the word lines,are covered with a protection film. Then, impurity diffusion regions formed in the device regions,, and then a plug insulating film is formed on an overall upper surface of the substrate,. Then, opening portions,for connecting end portions of the device regions,are formed in the plug insulating film. Then, a conductive film is buried in the opening portions,, and then the conductive film and the plug insulating film are polished by the CMP method until any one of the protection film on the device isolation regions,and the protection film on the device regions,is exposed.

Semiconductor device and method of manufacturing the same

Semiconductor device with first and second wells which have opposite

Growing community of inventors

Kawasaki, Japan

Satoru Miyoshi